丝印：22N95K5；Package：TO-247；Automotive-grade N-channel 950 V

Description This device is an N-channel Power MOSFET developed using SuperMESH™ 5 technology. This revolutionary, avalanche-rugged, high voltage Power MOSFET technology is based on an innovative proprietary vertical structure. The result is a drastic reduction in on-resistance and ultra low

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STMICROELECTRONICS

意法半导体

汽车级N沟道950 V、0.280 Ohm典型值MDmesh K5功率MOSFET，TO-247封装

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. • AEC-Q101 qualified \n• Industry’s lowest RDS(on) x area \n• Industry’s best FoM (figure of merit) \n• Ultra-low gate charge \n• 100% avalanche tested \n• Zener-protected;

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意法半导体

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TO-247

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上传：深圳市恒星亚创科技有限公司

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TO-247-3

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上传：深圳市英特法电子科技有限公司

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TO-247

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上传：深圳市恒星亚创科技有限公司