丝印：2023；Package：TSSOP；SINGLE-WIRE ADVANCED BATTERY MONITOR IC FOR CELLULAR AND PDA APPLICATIONS

Multifunction Monitoring IC Designed to Work With an Intelligent Host Controller: – Provides Accurate State of Charge Information for Rechargeable Batteries – Enhances Power and Charge Management in the System Supply Operation Down to 2.4 V; Ideal for Single-Cell Li-Ion or Li-Pol Applicatio

文件：744.86 Kbytes 页数：32 Pages

TI

德州仪器

丝印：2020；Package：SOT-23-6L；N and P-Channel Enhancement Mode Power MOSFET

General Features N-Channel Vos = 20V,lp =0.75A Rds(on) 6KV, HBM (Gate-Source Zenner) High power and current handing capab

文件：400.46 Kbytes 页数：9 Pages

RECTRON

丽正国际

丝印：2020；Package：SOT-363-6L；N and P-Channel Enhancement Mode Power MOSFET

General Features N-Channel Vds = 20Vjo =0.75A Rds(on)

文件：331.88 Kbytes 页数：9 Pages

RECTRON

丽正国际

丝印：2024；Positive Temperature Coefficient (PTC) Data Sheet

Description The 2920 series provides surface mount resettable overcurrent protection with holding current from 0.3A to 5.0A. This series offers complete portfolio in terms of holding current and working voltage, and is suitable for wide range of application. Features ■ RoHS compliant and le

文件：585.29 Kbytes 页数：8 Pages

BRIGHTKING

君耀

丝印：2024；Positive Temperature Coefficient (PTC) Data Sheet

Description The 2920 series provides surface mount resettable overcurrent protection with holding current from 0.3A to 5.0A. This series offers complete portfolio in terms of holding current and working voltage, and is suitable for wide range of application. Features ■ RoHS compliant and le

文件：585.29 Kbytes 页数：8 Pages

BRIGHTKING

君耀

丝印：20240NP7；Package：TO-247-3L；72A, 200V N-CHANNEL MOSFET

DESCRIPTION SVT20240NT(P7)(S) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. Th

文件：278.87 Kbytes 页数：8 Pages

SILAN

士兰微

丝印：20240NS；Package：TO-263-2L；72A, 200V N-CHANNEL MOSFET

DESCRIPTION SVT20240NT(P7)(S) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. Th

文件：278.87 Kbytes 页数：8 Pages

SILAN

士兰微

丝印：20240NS；Package：TO-263-2L；72A, 200V N-CHANNEL MOSFET

DESCRIPTION SVT20240NT(P7)(S) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. Th

文件：278.87 Kbytes 页数：8 Pages

SILAN

士兰微

丝印：2020；Package：SOIC；POWER-DISTRIBUTION SWITCHES

1FEATURES · 33-mΩ (5-V Input) High-Side MOSFET Switch · Short-Circuit and Thermal Protection · Overcurrent Logic Output · Operating Range . . . 2.7 V to 5.5 V · Logic-Level Enable Input · Typical Rise Time . . . 6.1 ms · Undervoltage Lockout · Maximum Standby Supply Current . . . 10 μA ·

文件：859.75 Kbytes 页数：30 Pages

TI

德州仪器

丝印：2020；Package：SOIC；POWER-DISTRIBUTION SWITCHES

1FEATURES · 33-mΩ (5-V Input) High-Side MOSFET Switch · Short-Circuit and Thermal Protection · Overcurrent Logic Output · Operating Range . . . 2.7 V to 5.5 V · Logic-Level Enable Input · Typical Rise Time . . . 6.1 ms · Undervoltage Lockout · Maximum Standby Supply Current . . . 10 μA ·

文件：859.75 Kbytes 页数：30 Pages

TI

德州仪器