UPG2024TQ-E1

Marking：2024；Package：TSON；GaAs INTEGRATED CIRCUIT

FEATURES •Operatingfrequency:f=4.8to5.85GHz •Lowinsertionloss:LINS=1.2dBTYP.@f=4.8to5.85GHz •Handlingpower:Pin(0.1dB)=+32dBmTYP.@f=4.8to5.85GHz •Controlvoltage:Vcont=+2.8V/0VTYP. •Highisolation:ISL(betweenTXandRX)=30dBTYP.@f=5

UPG2024TQ-E1-A

Marking：2024；Package：TSON；GaAs INTEGRATED CIRCUIT

FEATURES •Operatingfrequency:f=4.8to5.85GHz •Lowinsertionloss:LINS=1.2dBTYP.@f=4.8to5.85GHz •Handlingpower:Pin(0.1dB)=+32dBmTYP.@f=4.8to5.85GHz •Controlvoltage:Vcont=+2.8V/0VTYP. •Highisolation:ISL(betweenTXandRX)=30dBTYP.@f=5

SVT20240NP7

Marking：20240NP7；Package：TO-247-3L；72A, 200V N-CHANNEL MOSFET

DESCRIPTION SVT20240NT(P7)(S)isanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilan'sLVMOS technology.Theimprovedprocessandcellstructurehavebeen especiallytailoredtominimizeon-stateresistance,providesuperior switchingperformance. Th

SVT20240NS

Marking：20240NS；Package：TO-263-2L；72A, 200V N-CHANNEL MOSFET

DESCRIPTION SVT20240NT(P7)(S)isanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilan'sLVMOS technology.Theimprovedprocessandcellstructurehavebeen especiallytailoredtominimizeon-stateresistance,providesuperior switchingperformance. Th

SVT20240NSTR

Marking：20240NS；Package：TO-263-2L；72A, 200V N-CHANNEL MOSFET

DESCRIPTION SVT20240NT(P7)(S)isanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilan'sLVMOS technology.Theimprovedprocessandcellstructurehavebeen especiallytailoredtominimizeon-stateresistance,providesuperior switchingperformance. Th

SVT20240NT

Marking：20240NT；Package：TO-220-3L；72A, 200V N-CHANNEL MOSFET

DESCRIPTION SVT20240NT(P7)(S)isanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilan'sLVMOS technology.Theimprovedprocessandcellstructurehavebeen especiallytailoredtominimizeon-stateresistance,providesuperior switchingperformance. Th

ISL12024IVZ

Marking：2024IVZ；Package：8LdTSSOP；Real-Time Clock/Calendar with Embedded Unique ID