型号：SMD2920B200TF/24；Positive Temperature Coefficient (PTC) Data Sheet

Description The 2920 series provides surface mount resettable overcurrent protection with holding current from 0.3A to 5.0A. This series offers complete portfolio in terms of holding current and working voltage, and is suitable for wide range of application. Features ■ RoHS compliant and le

文件：585.29 Kbytes 页数：8 Pages

BRIGHTKING

君耀

型号：SMD2920B200TFSLASH24；Positive Temperature Coefficient (PTC) Data Sheet

Description The 2920 series provides surface mount resettable overcurrent protection with holding current from 0.3A to 5.0A. This series offers complete portfolio in terms of holding current and working voltage, and is suitable for wide range of application. Features ■ RoHS compliant and le

文件：585.29 Kbytes 页数：8 Pages

BRIGHTKING

君耀

型号：UPG2024TQ-E1；Package：TSON；GaAs INTEGRATED CIRCUIT

FEATURES • Operating frequency : f = 4.8 to 5.85 GHz • Low insertion loss : LINS = 1.2 dB TYP. @ f = 4.8 to 5.85 GHz • Handling power : Pin (0.1 dB) = +32 dBm TYP. @ f = 4.8 to 5.85 GHz • Control voltage : Vcont = +2.8 V/0 V TYP. • High isolation : ISL (between TX and RX) = 30 dB TYP. @ f = 5

文件：276.65 Kbytes 页数：14 Pages

RENESAS

瑞萨

型号：UPG2024TQ-E1-A；Package：TSON；GaAs INTEGRATED CIRCUIT

FEATURES • Operating frequency : f = 4.8 to 5.85 GHz • Low insertion loss : LINS = 1.2 dB TYP. @ f = 4.8 to 5.85 GHz • Handling power : Pin (0.1 dB) = +32 dBm TYP. @ f = 4.8 to 5.85 GHz • Control voltage : Vcont = +2.8 V/0 V TYP. • High isolation : ISL (between TX and RX) = 30 dB TYP. @ f = 5

文件：276.65 Kbytes 页数：14 Pages

RENESAS

瑞萨

型号：SVT20240NP7；Package：TO-247-3L；72A, 200V N-CHANNEL MOSFET

DESCRIPTION SVT20240NT(P7)(S) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. Th

文件：278.87 Kbytes 页数：8 Pages

SILAN

士兰微

型号：SVT20240NS；Package：TO-263-2L；72A, 200V N-CHANNEL MOSFET

DESCRIPTION SVT20240NT(P7)(S) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. Th

文件：278.87 Kbytes 页数：8 Pages

SILAN

士兰微

型号：SVT20240NSTR；Package：TO-263-2L；72A, 200V N-CHANNEL MOSFET

DESCRIPTION SVT20240NT(P7)(S) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. Th

文件：278.87 Kbytes 页数：8 Pages

SILAN

士兰微

型号：SVT20240NT；Package：TO-220-3L；72A, 200V N-CHANNEL MOSFET

DESCRIPTION SVT20240NT(P7)(S) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. Th

文件：278.87 Kbytes 页数：8 Pages

SILAN

士兰微

型号：TPS2024IDRG4Q1；Package：SOIC；POWER-DISTRIBUTION SWITCHES

1FEATURES • Qualified for Automotive Applications • 33-mΩ (5-V Input) High-Side MOSFET Switch • Short-Circuit and Thermal Protection • Overcurrent Logic Output • Operating Range: 2.7 V to 5.5 V • Logic-Level Enable Input • Typical Rise Time: 6.1 ms • Undervoltage Lockout • Maximum Standby

文件：737.15 Kbytes 页数：28 Pages

TI2

德州仪器

型号：TPS2024IDRG4Q1.A；Package：SOIC；POWER-DISTRIBUTION SWITCHES

1FEATURES • Qualified for Automotive Applications • 33-mΩ (5-V Input) High-Side MOSFET Switch • Short-Circuit and Thermal Protection • Overcurrent Logic Output • Operating Range: 2.7 V to 5.5 V • Logic-Level Enable Input • Typical Rise Time: 6.1 ms • Undervoltage Lockout • Maximum Standby

文件：737.15 Kbytes 页数：28 Pages

TI2

德州仪器