1 3/4 (44.5 mm) Single Turn Wirewound Precision Potentiometer

FEATURES • Large range of ohmic values: 5  to 65 k • Screw, servo or bushing mount types available • Up to 6 sections on the same shaft • Extra taps upon request • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

文件：116.99 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世威世科技公司

ROD SEALS

DESCRIPTION The BECA 202 is a compo-compact rod seal composed of a flexible NBR ring, a fabric NBR support on the back and a polyoxymethylene back-up ring. APPLICATIONS Hydraulic cylinders Earth-moving machinery Mining machinery

文件：365.24 Kbytes 页数：2 Pages

FRANCEJOINT

102/103, 202/203, 302/303 Flanged Diaphragm Seal

FEATURES 316L stainless steel top housing (standard) A thin PTFE gasket between the diaphragm/bottom housing ensures a leak-tight, corrosion resistant seal Continuous duty design prevents loss of process fluid if pressure instrument is removed or fails Modular design allows for a suitable

文件：670.24 Kbytes 页数：5 Pages

ASHCROFT

雅斯科

FLAT-PAK Fast Acting Fuse202 Series

文件：40.13 Kbytes 页数：1 Pages

Littelfuse

力特

Direct replacement for French Style T1 Midget Flange SX3s

文件：273.07 Kbytes 页数：5 Pages

MARL

M12-A Female 4 Pin Field Attachable

文件：195.25 Kbytes 页数：2 Pages

ALPHAWIRE

丝印：202；Package：DSBGA；CSD23202W10 12-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Small Footprint 1 mm × 1 mm • Low Profile 0.62-mm Height • Pb Free • Gate ESD Protection – 3 kV • RoHS Compliant • Halogen Free 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 12 V, 44 mΩ device is desi

文件：496.59 Kbytes 页数：11 Pages

TI

德州仪器

丝印：202；Package：DSBGA；CSD23202W10 12-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Small Footprint 1 mm × 1 mm • Low Profile 0.62-mm Height • Pb Free • Gate ESD Protection – 3 kV • RoHS Compliant • Halogen Free 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 12 V, 44 mΩ device is desi

文件：496.59 Kbytes 页数：11 Pages

TI

德州仪器

丝印：202；Package：DSBGA；CSD23202W10 12-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Small Footprint 1 mm × 1 mm • Low Profile 0.62-mm Height • Pb Free • Gate ESD Protection – 3 kV • RoHS Compliant • Halogen Free 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 12 V, 44 mΩ device is desi

文件：496.59 Kbytes 页数：11 Pages

TI

德州仪器

丝印：202；Package：DSBGA；CSD23202W10 12-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Small Footprint 1 mm × 1 mm • Low Profile 0.62-mm Height • Pb Free • Gate ESD Protection – 3 kV • RoHS Compliant • Halogen Free 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 12 V, 44 mΩ device is desi

文件：496.59 Kbytes 页数：11 Pages

TI

德州仪器