ISL12029AIV27Z

Marking：2029AIV27Z；Package：TSSOP；Real Time Clock/Calendar with I2C Bus™ and EEPROM

Features •RealTimeClock/Calendar -TracksTimeinHours,MinutesandSeconds -DayoftheWeek,Day,MonthandYear -3SelectableFrequencyOutputs •TwoNon-VolatileAlarms -SettableontheSecond,Minute,Hour,DayoftheWeek, DayorMonth -RepeatMode(periodicinterrupts) •Aut

RM2020ES6

Marking：2020；Package：SOT-23-6L；N and P-Channel Enhancement Mode Power MOSFET

GeneralFeatures N-Channel Vos=20V,lp=0.75A Rds(on)6KV,HBM(Gate-SourceZenner) Highpowerandcurrenthandingcapab

RM2020ES9

Marking：2020；Package：SOT-363-6L；N and P-Channel Enhancement Mode Power MOSFET

GeneralFeatures N-Channel Vds=20Vjo=0.75A Rds(on)

SMD2920B200TF/24

Marking：2024；Positive Temperature Coefficient (PTC) Data Sheet

Description The2920seriesprovidessurfacemountresettableovercurrentprotectionwith holdingcurrentfrom0.3Ato5.0A.Thisseriesofferscompleteportfoliointermsof holdingcurrentandworkingvoltage,andissuitableforwiderangeofapplication. Features ■RoHScompliantandle

SMD2920B200TFSLASH24

Marking：2024；Positive Temperature Coefficient (PTC) Data Sheet

Description The2920seriesprovidessurfacemountresettableovercurrentprotectionwith holdingcurrentfrom0.3Ato5.0A.Thisseriesofferscompleteportfoliointermsof holdingcurrentandworkingvoltage,andissuitableforwiderangeofapplication. Features ■RoHScompliantandle

SVT20240NP7

Marking：20240NP7；Package：TO-247-3L；72A, 200V N-CHANNEL MOSFET

DESCRIPTION SVT20240NT(P7)(S)isanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilan'sLVMOS technology.Theimprovedprocessandcellstructurehavebeen especiallytailoredtominimizeon-stateresistance,providesuperior switchingperformance. Th

SVT20240NS

Marking：20240NS；Package：TO-263-2L；72A, 200V N-CHANNEL MOSFET

DESCRIPTION SVT20240NT(P7)(S)isanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilan'sLVMOS technology.Theimprovedprocessandcellstructurehavebeen especiallytailoredtominimizeon-stateresistance,providesuperior switchingperformance. Th

SVT20240NSTR

Marking：20240NS；Package：TO-263-2L；72A, 200V N-CHANNEL MOSFET

DESCRIPTION SVT20240NT(P7)(S)isanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilan'sLVMOS technology.Theimprovedprocessandcellstructurehavebeen especiallytailoredtominimizeon-stateresistance,providesuperior switchingperformance. Th

SVT20240NT

Marking：20240NT；Package：TO-220-3L；72A, 200V N-CHANNEL MOSFET

DESCRIPTION SVT20240NT(P7)(S)isanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilan'sLVMOS technology.Theimprovedprocessandcellstructurehavebeen especiallytailoredtominimizeon-stateresistance,providesuperior switchingperformance. Th

UPG2024TQ-E1

Marking：2024；Package：TSON；GaAs INTEGRATED CIRCUIT

FEATURES •Operatingfrequency:f=4.8to5.85GHz •Lowinsertionloss:LINS=1.2dBTYP.@f=4.8to5.85GHz •Handlingpower:Pin(0.1dB)=+32dBmTYP.@f=4.8to5.85GHz •Controlvoltage:Vcont=+2.8V/0VTYP. •Highisolation:ISL(betweenTXandRX)=30dBTYP.@f=5