丝印：202；Package：DSBGA；CSD23202W10 12-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Small Footprint 1 mm × 1 mm • Low Profile 0.62-mm Height • Pb Free • Gate ESD Protection – 3 kV • RoHS Compliant • Halogen Free 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 12 V, 44 mΩ device is desi

文件：496.59 Kbytes 页数：11 Pages

TI

德州仪器

丝印：202；Package：DSBGA；CSD23202W10 12-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Small Footprint 1 mm × 1 mm • Low Profile 0.62-mm Height • Pb Free • Gate ESD Protection – 3 kV • RoHS Compliant • Halogen Free 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 12 V, 44 mΩ device is desi

文件：496.59 Kbytes 页数：11 Pages

TI

德州仪器

丝印：202；Package：DSBGA；CSD23202W10 12-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Small Footprint 1 mm × 1 mm • Low Profile 0.62-mm Height • Pb Free • Gate ESD Protection – 3 kV • RoHS Compliant • Halogen Free 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 12 V, 44 mΩ device is desi

文件：496.59 Kbytes 页数：11 Pages

TI

德州仪器

丝印：202；Package：DSBGA；CSD23202W10 12-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Small Footprint 1 mm × 1 mm • Low Profile 0.62-mm Height • Pb Free • Gate ESD Protection – 3 kV • RoHS Compliant • Halogen Free 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 12 V, 44 mΩ device is desi

文件：496.59 Kbytes 页数：11 Pages

TI

德州仪器

丝印：202；Package：SOT-25；High Voltage Linear Regulator

文件：423.06 Kbytes 页数：7 Pages

AIMTRON

丝印：2020；Package：SOT-23-6L；N and P-Channel Enhancement Mode Power MOSFET

General Features N-Channel Vos = 20V,lp =0.75A Rds(on) 6KV, HBM (Gate-Source Zenner) High power and current handing capab

文件：400.46 Kbytes 页数：9 Pages

RECTRON

丽正国际

丝印：2020；Package：SOT-363-6L；N and P-Channel Enhancement Mode Power MOSFET

General Features N-Channel Vds = 20Vjo =0.75A Rds(on)

文件：331.88 Kbytes 页数：9 Pages

RECTRON

丽正国际

丝印：2020；Package：SOIC；POWER-DISTRIBUTION SWITCHES

1FEATURES · 33-mΩ (5-V Input) High-Side MOSFET Switch · Short-Circuit and Thermal Protection · Overcurrent Logic Output · Operating Range . . . 2.7 V to 5.5 V · Logic-Level Enable Input · Typical Rise Time . . . 6.1 ms · Undervoltage Lockout · Maximum Standby Supply Current . . . 10 μA ·

文件：859.75 Kbytes 页数：30 Pages

TI

德州仪器

丝印：2020；Package：SOIC；POWER-DISTRIBUTION SWITCHES

1FEATURES · 33-mΩ (5-V Input) High-Side MOSFET Switch · Short-Circuit and Thermal Protection · Overcurrent Logic Output · Operating Range . . . 2.7 V to 5.5 V · Logic-Level Enable Input · Typical Rise Time . . . 6.1 ms · Undervoltage Lockout · Maximum Standby Supply Current . . . 10 μA ·

文件：859.75 Kbytes 页数：30 Pages

TI

德州仪器

丝印：2020；Package：SOIC；POWER-DISTRIBUTION SWITCHES

1FEATURES · 33-mΩ (5-V Input) High-Side MOSFET Switch · Short-Circuit and Thermal Protection · Overcurrent Logic Output · Operating Range . . . 2.7 V to 5.5 V · Logic-Level Enable Input · Typical Rise Time . . . 6.1 ms · Undervoltage Lockout · Maximum Standby Supply Current . . . 10 μA ·

文件：859.75 Kbytes 页数：30 Pages

TI

德州仪器