SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 200 Volts Forward Current - 1.0Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Metal silicon junction ,majority carrier conduction • Low power loss ,high efficiency • High current capability ,Low forward voltage drop •

文件：65.7 Kbytes 页数：2 Pages

JINANJINGHENG

晶恒集团

Schottky Barrier Rectifier

Features ● Guardring for overvoltage protection ● Very small conduction losses ● Extremely fast switching ● High forward surge capability ● High frequency operation ● Solder dip 275 °C max. 7 s, per JESD 22-B106 Typical Applications For use in low voltage high frequency inverters, free

文件：192.81 Kbytes 页数：4 Pages

YANGJIE

扬杰电子

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 200 Volts Forward Current - 1.0Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Metal silicon junction ,majority carrier conduction • Low power loss ,high efficiency • High current capability ,Low forward voltage drop •

文件：55.38 Kbytes 页数：2 Pages

JINGHENG

晶恒

Silicon Epitaxial Planar Diode for High Speed Switching

Silicon Epitaxial Planar Diode for High Speed Switching Features • Low capacitance. (C = 3.0 pF max) • Short reverse recovery time. (trr = 4.0 ns max) • High reliability with glass seal.

文件：28.02 Kbytes 页数：6 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon Epitaxial Planar Diode for High Speed Switching

Silicon Epitaxial Planar Diode for High Speed Switching Features • Low capacitance. (C = 3.0 pF max) • Short reverse recovery time. (trr = 4.0 ns max) • High reliability with glass seal.

文件：28.02 Kbytes 页数：6 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon Epitaxial Planar Diode for High Speed Switching

Silicon Epitaxial Planar Diode for High Speed Switching Features • Low capacitance. (C = 3.5 pF max) • Short reverse recovery time. (trr = 8.0 ns max) • High reliability with glass seal.

文件：27.75 Kbytes 页数：6 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon Epitaxial Planar Diode for High Speed Switching

Silicon Epitaxial Planar Diode for High Speed Switching Features • Low capacitance. (C = 3.5 pF max) • Short reverse recovery time. (trr = 8.0 ns max) • High reliability with glass seal.

文件：27.75 Kbytes 页数：6 Pages

HITACHIHitachi Semiconductor

日立日立公司

HIGH SPEED SWITCHING DIODE

PRV : 70 Volts Io : 150 mA FEATURES : * Silicon Epitaxial Planar Diode * High reliability * Low reverse current * Low forward voltage drop * High speed switching * Pb / RoHS Free

文件：95.69 Kbytes 页数：2 Pages

EIC

Silicon Epitaxial Planar Diode for Various Detector, Modulator, Demodulator

Features • Low capacitance. (C=3.0pF max) • Short reverse recovery time. (trr =8.0ns max) • High reliability with glass seal.

文件：27.53 Kbytes 页数：6 Pages

HITACHIHitachi Semiconductor

日立日立公司

HIGH SPEED SWITCHING DIODE

PRV : 70 Volts Io : 150 mA FEATURES : * Silicon Epitaxial Planar Diode * High reliability * Low reverse current * Low forward voltage drop * High speed switching * Pb / RoHS Free MECHANICAL DATA : * Case : DO-35 Glass Case * Lead : Axial lead solderable per MIL

文件：29.98 Kbytes 页数：2 Pages

SYNSEMI