Silicon Epitaxial Planar Diode for High Speed Switching

Silicon Epitaxial Planar Diode for High Speed Switching Features • Low capacitance. (C = 3.0 pF max) • Short reverse recovery time. (trr = 4.0 ns max) • High reliability with glass seal.

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Silicon Epitaxial Planar Diode for High Speed Switching

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Silicon Epitaxial Planar Diode for High Speed Switching

Silicon Epitaxial Planar Diode for High Speed Switching •  Low capacitance. (C = 3.0 pF max)\n•  Short reverse recovery time. (trr = 4.0 ns max)\n•  High reliability with glass seal.;

HITACHI

日立

Silicon Epitaxial Planar Diode for High Speed Switching

Silicon Epitaxial Planar Diode for High Speed Switching •  Low capacitance. (C = 3.0 pF max)\n•  Short reverse recovery time. (trr = 4.0 ns max)\n•  High reliability with glass seal.;

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