HIGH SPEED SWITCHING DIODE

PRV : 70 Volts Io : 150 mA FEATURES : * Silicon Epitaxial Planar Diode * High reliability * Low reverse current * Low forward voltage drop * High speed switching * Pb / RoHS Free MECHANICAL DATA : * Case : DO-35 Glass Case * Lead : Axial lead solderable per MIL

文件：29.98 Kbytes 页数：2 Pages

SYNSEMI

High reliability with glass seal.

Features • Low capacitance. (C = 3.0pF max) • Short reverse recovery time. (trr = 8.0ns max) • High reliability with glass seal.

文件：551.75 Kbytes 页数：3 Pages

LUGUANG

鲁光电子

SMALL SIGNAL SWITCHING DIODE

REVERSE VOLTAGE : 60 V CURRENT: 0.15 A FEATURES Silicon epitaxial planar diode High speed switching diode 500 mW power dissipation Weight: 0.004 ounces, 0.13 grams MECHANICAL DATA Case: DO-35, glass case Polarity: Color band denotes cathode

文件：374.22 Kbytes 页数：3 Pages

KISEMICONDUCTOR

Silicon Epitaxial Planar Diode for Various Detector, Modulator, Demodulator

Features • Low capacitance. (C=3.0pF max) • Short reverse recovery time. (trr =8.0ns max) • High reliability with glass seal.

文件：27.53 Kbytes 页数：6 Pages

HitachiHitachi Semiconductor

日立日立公司

HIGH SPEED SWITCHING DIODE

PRV : 70 Volts Io : 150 mA FEATURES : * Silicon Epitaxial Planar Diode * High reliability * Low reverse current * Low forward voltage drop * High speed switching * Pb / RoHS Free

文件：95.69 Kbytes 页数：2 Pages

EIC

Silicon Epitaxial Planar Diode for High Speed Switching

文件：143.65 Kbytes 页数：5 Pages

RENESAS

瑞萨

Switching Diodes

分立

EIC

灿阳

Silicon Epitaxial Planar Diode for High Speed Switching DO-35

• Low capacitance. (C = 3.0 pF max)\n• Short reverse recovery time. (trr = 8.0 ns max)\n• High reliability with glass seal.;

Renesas

瑞萨

Diode Small Signal Switching 70V 0.15A 2-Pin DO-35

NJS