1S2076A

HIGH SPEED SWITCHING DIODE

PRV:70Volts Io:150mA FEATURES: *SiliconEpitaxialPlanarDiode *Highreliability *Lowreversecurrent *Lowforwardvoltagedrop *Highspeedswitching *Pb/RoHSFree MECHANICALDATA: *Case:DO-35GlassCase *Lead:AxialleadsolderableperMIL

1S2092

SILICON EPTAXIAL PLANAR TYPE

SiliconEptaxialPlanarTypeDiode GENERALPURPOSEDETECTORANDRECTIFIERAPPLICATIONS

1S2093

SILICON PLANAR TYPE TRIGGER DIODE

SiliconPlanarTypeTriggerDiode THYRISTOR,TRIACTRIGGERAPPLICATIONS.

1S2094

VARIABLE CAPACITANCE DIODE

SiliconEpitaxialPlanarType VARIABLECAPACITANCEDIODE UHF,VHFAFCAPPLICATIONS.

1S2095A

SILICON EPITAXIAL PLANAR TYPE DIODE

ULTRAHIGHSPEEDSWITCHINGAPPLICATIONS. COREDRIVEAPPLICATIONS.

1S2207

VARACTOR DIODE

DESCRIPTIONThe152207(8B)iahyper-abruptunctiontypsvoltage: varisblecapacitancediode. Itisdesignedforlectronictuningcicuitapplicationsin VHEandUHFbandsandfeatureshighO,highcapaci- tanceratioandhighreliability. FEATURES -HighQ. -Highcapacitanceratio. -L

1S2208

SILICON VARACTOR DIODES

DESCRIPTIONThe152208(8)and152200(B)areahyper-abruptjunction typevoltage-variablecapacitancediodes. ‘The152208(8)and15220(8)aredesignedforelectronic tuningcircuitapplicationinUHFandVHF. FEATURES -Lowseriesresistance.0,352TYP. -Highcapacitanceratio, -Lowle

1S2236

SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE

AFCAPPLICATIONFORFMRECEIVER. FEATURES: •HighQ:Q=70(Min.)(f=50MHz) •LowReverseCurrent:IR=100nA(Max.)(VR=4V)

1S2460

GENERAL PURPOSE RECTIFIER APPLICATIONS.

GENERALPURPOSERECTIFIERAPPLICATIONS

1S2461

GENERAL PURPOSE RECTIFIER APPLICATIONS.

GENERALPURPOSERECTIFIERAPPLICATIONS