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1N6263W_

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Fast Switching Time • Low Reverse Capacitance • Surface Mount Package Ideally Suited for Automatic Insertion

文件:236.72 Kbytes 页数:3 Pages

DIODES

美台半导体

1N6263W-7-F

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Fast Switching Time • Low Reverse Capacitance • Surface Mount Package Ideally Suited for Automatic Insertion

文件:236.72 Kbytes 页数:3 Pages

DIODES

美台半导体

1N6263WS

SILICON SCHOTTKY BARRIER DIODE

SILICON SCHOTTKY BARRIER DIODE for general purpose applications

文件:222.62 Kbytes 页数:3 Pages

SEMTECH_ELEC

先之科半导体

1N6263WT

SILICON SCHOTTKY BARRIER DIODE

SILICON SCHOTTKY BARRIER DIODE for general purpose applications

文件:135.3 Kbytes 页数:2 Pages

SEMTECH_ELEC

先之科半导体

1N6264

GaAs INFRARED EMITTING DIODE

DESCRIPTION • The 1N6264 is a 940 nm LED in a narrow angle, TO-46 package. FEATURES • Good optical to mechanical alignment • Mechanically and wavelength matched to the TO-18 series phototransistor • Hermetically sealed package • High irradiance level • (*) Indicates JEDEC registered values

文件:120.87 Kbytes 页数:3 Pages

FAIRCHILD

仙童半导体

1N6265

GaAs INFRARED EMITTING DIODE

DESCRIPTION • The 1N6265 is a 940 nm LED in a narrow angle, TO-46 package. FEATURES • Good optical to mechanical alignment • Mechanically and wavelength matched to the TO-18 series phototransistor • Hermetically sealed package • High irradiance level • (*) Indicates JEDEC registered values

文件:165.96 Kbytes 页数:3 Pages

FAIRCHILD

仙童半导体

1N6266

GaAs INFRARED EMITTING DIODE

DESCRIPTION • The 1N6266 is a 940 nm LED in a narrow angle, TO-46 package. FEATURES • Good optical to mechanical alignment • Mechanically and wavelength matched to the TO-18 series phototransistor • Hermetically sealed package • High irradiance level • (*) Indicates JEDEC registered values

文件:207.98 Kbytes 页数:7 Pages

FAIRCHILD

仙童半导体

1N6267

Unidirectional & Bidirectional Transient Voltage Suppressors

DESCRIPTION The Transient Voltage Suppressor (TVS) series for 1N5908 & 1N6267-1N6303A are JEDEC registered selections for unidirectional devices. The popular series of 1.5KE6.8-1.5KE400CA offers similar voltages with an extended voltage range and also provides bidirectional options with a C o

文件:257.279 Kbytes 页数:5 Pages

MICROSEMI

美高森美

1N6267

TRANSIENT ABSORPTION ZENER

DESCRIPTION The Transient Voltage Suppressor (TVS) series for 1N5908 & 1N6267-1N6303A are JEDEC registered selections for unidirectional devices. The popular series of 1.5KE6.8-1.5KE400CA offers similar voltages with an extended voltage range and also provides bidirectional options with a C o

文件:252.34 Kbytes 页数:2 Pages

MICROSEMI

美高森美

1N6267

TRANSIENT VOLTAGE SUPPRESSOR

VBR : 6.8 - 200 Volts PPK : 1500 Watts FEATURES : * 1500W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1mA above 10V

文件:27.49 Kbytes 页数:4 Pages

EIC

技术参数

  • Peak Reverse Repetitive Voltage:

    35V

  • Peak Reverse Recovery Time:

    1000ns

  • Peak Reverse Current:

    1uA

  • Peak Non-Repetitive Surge Current:

    0.5A

  • Peak Forward Voltage:

    1.5@0.004AV

  • Operating Junction Temperature:

    -65 to 200°C

  • Minimum Operating Temperature:

    -65°C

  • Maximum Power Dissipation:

    400mW

  • Maximum Operating Temperature:

    200°C

  • Maximum Continuous Forward Current:

    0.02A

  • Configuration:

    Single

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6000
进口原装正品假一赔十,货期7-10天
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1000
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NJS
16+
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2602+
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更多1N62供应商 更新时间2026-10-22 17:10:00