SILICON SCHOTTKY BARRIER DIODE

SILICON SCHOTTKY BARRIER DIODE for general purpose applications

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SEMTECH_ELEC

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Schottky Diodes

Features • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low for ward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast swit

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GE

SCHOTTKY BARRIER SWITCHING DIODE

Features • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Fast Switching Time • Low Reverse Capacitance

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DIODES

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SMALL SIGNAL SCHOTTKY DIODE

DESCRIPTION Metal to silicon junction diode featuring high breakdown, low turn-on voltage and ultrafast switching. Primarly intended for high level UHF/VHF detection and pulse application with broad dynamic range.

文件：49.74 Kbytes 页数：3 Pages

STMICROELECTRONICS

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