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1N6263WS

SILICON SCHOTTKY BARRIER DIODE

SILICONSCHOTTKYBARRIERDIODEforgeneralpurposeapplications

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技(东莞)有限公司

1N6263

SMALLSIGNALSCHOTTKYDIODE

DESCRIPTION Metaltosiliconjunctiondiodefeaturinghighbreakdown,lowturn-onvoltageandultrafastswitching. PrimarlyintendedforhighlevelUHF/VHFdetectionandpulseapplicationwithbroaddynamicrange.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

1N6263

SCHOTTKYBARRIERSWITCHINGDIODE

Features •LowForwardVoltageDrop •GuardRingConstructionforTransient Protection •FastSwitchingTime •LowReverseCapacitance

DIODESDiodes Incorporated

达尔科技

1N6263

SchottkyDiodes

Features •Forgeneralpurposeapplications •Metal-on-siliconSchottkybarrierdevicewhichis protectedbyaPNjunctionguardring.Thelowfor wardvoltagedropandfastswitchingmakeitideal forprotectionofMOSdevices,steering,biasing andcouplingdiodesforfastswit

GE

GE Industrial Company

1N6263

Small-SignalDiodeSchottkyDiodes

Features ◆Forgeneralpurposeapplications ◆Metal-on-siliconSchottkybarrierdevicewhichisprotectedbya PNjunctionguardring.Thelowforwardvoltagedropandfast switchingmakeitidealforprotectionofMOSdevices,steering, biasingandcouplingdiodesforfastswitching

Good-Ark

Good-Ark

1N6263

SCHOTTKYBARRIERDIODES

VRRM:70V,60V FEATURES: •Forgeneralpurposeapplications •Metal-on-siliconSchottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitidealforprotectionof MOSdevices,steering,biasingandcouplingdiode

SYNSEMI

SynSemi,Inc.

1N6263

400mWattSmallSignalSchottkyDiode60to70Volts

Features •MoistureSensitivity:Level1perJ-STD-020C •HighReverseBreakdownVoltage •LowForwardVoltageDrop •ForGeneralPurposeApplication •Marking:Cathodebandandtypenumber •LeadFreeFinish/RohsCompliant(Note1)(PSuffixdesignates Compliant.Seeorderinginformation

MCCMicro Commercial Components

美微科美微科半导体公司

1N6263

SCHOTTKYBARRIERDIODES

VRRM:70V,60V FEATURES: •Forgeneralpurposeapplications •Metal-on-siliconSchottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitidealforprotectionof MOSdevices,steering,biasingandcouplingdiode

EIC

EIC

1N6263

SCHOOTTKYBARRIERDIODES

SCHOOTTKYBARRIERDIODES FEATURES HermeticallySealed MetalurgicallyBonded DoublePlugConstruction

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

1N6263

SMALLSIGNALSCHOTTKYDIODES

FEATURES •Forgeneralpurposeapplications •Metal-on-siliconjunctionSchottkybarrierdevicewhichisprotectedbya PNjunctionguardring.Thelowforwardvoltagedropandfastswitching makeitidealforprotectionofMOSdevices,steering,biasingand couplingdiodesforfast

JINANJINGHENGJinan Jingheng (Group) Co.,Ltd

晶恒集团济南晶恒电子有限责任公司

1N6263

SMALLSIGNALSCHOTTKYDIODE

VOLTAGERANGE:60VPOWERDISSIPATION:400mW FEATURES ◇Forgeneralpurposeapplications ◇fastswitchingandlowlogiclevelapplications Metalsiliconschottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitid

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

1N6263

400mWattSmallSignalSchottkyDiode60to70Volts

Features •HighReverseBreakdownVoltage •LowForwardVoltageDrop •ForGeneralPurposeApplication

CHENYIShanghai Lunsure Electronic Tech

商朗电子上海商朗电子科技有限公司

1N6263

SMALLSIGNALSCHOTTKYDIODE

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

PDF上传者:深圳市福田区吉富昌电子商行

1N6263

SmallSignalSchottkyDiodes

VOLTAGERANGE:60VPOWERDISSIPATION:400mW Features ◇Forgeneralpurposeapplications ◇Metalsiliconschottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitidealforprotectionof MOSdevices,steering,biasi

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

1N6263

SCHOTTKYDIODES

SCHOTTKYDIODES •Forgeneralpurposeapplications •Metal-on-siliconSchottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltagedrop andfastswitchingmakeitidealforprotectionofMOSdevices.

DIGITRON

Digitron Semiconductors

1N6263

SMALLSIGNALSCHOTTKYDIODES

FEATURES •Forgeneralpurposeapplications •Metal-on-siliconjunctionSchottkybarrierdevicewhichisprotectedbya PNjunctionguardring.Thelowforwardvoltagedropandfastswitching makeitidealforprotectionofMOSdevices,steering,biasingand couplingdiodesforfast

JINGHENG

Jinan Jing Heng Electronics Co., Ltd.

1N6263

SMALLSIGNALSCHOTTKYDIODE

Features ●Forgeneralpurposeapplications ●Metal-on-siliconSchottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitidealforprotectionof MOSdevices,steering,biasingandcouplingdiodesfor fastswitc

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

1N6263

Forgeneralpurposeapplicationsnull

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

1N6263

15mAAxialLeadedSchottkyBarrierDiodes

Features ●Forgeneralpurposeapplications ●Metal-on-siliconSchottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitidealforprotectionof MOSdevices,steering,biasingandcouplingdiodesfor fastswitc

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

1N6263

SMALLSIGNALSCHOTTKYDIODE

VOLTAGERANGE:60VPOWERDISSIPATION:400mW FEATURES ◇Forgeneralpurposeapplications ◇fastswitchingandlowlogiclevelapplications Metalsiliconschottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitid

DSK

Diode Semiconductor Korea

详细参数

  • 型号:

    1N6263WS

  • 制造商:

    SEMTECH_ELEC

  • 制造商全称:

    SEMTECH ELECTRONICS LTD.

  • 功能描述:

    SILICON SCHOTTKY BARRIER DIODE

供应商型号品牌批号封装库存备注价格
23+
N/A
36000
正品授权货源可靠
询价
ST/意法
2014
SOD-323
2807
原装正品,不是原装免费送
询价
ST(先科)
23+
NA
42
肖特基二极管
询价
TSC/台湾半导体
22+
SOD-123
20000
保证原装正品,假一陪十
询价
DIODES/美台
23+
12000
询价
TOSHIBA/东芝
23+
SOD123
50000
全新原装正品现货,支持订货
询价
TOSHIBA/东芝
2022
SOD123
80000
原装现货,OEM渠道,欢迎咨询
询价
TOSHIBA/东芝
2023+
SOD-523
50000
AI智能識别、工業、汽車、醫療方案LPC批量及配套一站
询价
FH/风华高科
24+
DO35
98000
全新原厂原装正品现货,可提供技术支持、样品免费!
询价
FAIRCHILD
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
更多1N6263WS供应商 更新时间2024-4-29 11:36:00