Silicon Schottky Barrier Diode

Features ● Metal silicon junction, majority carrier conduction ● Ideal for used in detection or for switching on the radio, TV, etc.

文件：507.27 Kbytes 页数：3 Pages

YFWDIODE

佑风微

SCHOTTKY BARRIER DIODE

Features ● High reliability ● Low forward voltage and reverse current Mechanical Data ● Case: SOD-323, Molded Plastic ● Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 ● Polarity: Cathode Band ● Weight: 0.004 grams (approx.) ● Marking: A3

文件：391.04 Kbytes 页数：2 Pages

SUNMATE

森美特

SCHOTTKY BARRIER DIODE

Features • High reliability • Low forward voltage and reverse current Applications • For electronic calculator, etc. • Low current rectification and high speed switching

文件：203.62 Kbytes 页数：3 Pages

SEMTECH_ELEC

先之科半导体

45V Detection switch tube

文件：365.394 Kbytes 页数：2 Pages

SUNMATE

森美特

PDF上传者：深圳冠荣电子有限公司

SCHOTTKY BARRIER DIODE

文件：368.319 Kbytes 页数：2 Pages

SUNMATE

森美特

PDF上传者：深圳冠荣电子有限公司

SCHOTTKY BARRIER DIODE

文件：377.397 Kbytes 页数：2 Pages

SUNMATE

森美特

PDF上传者：深圳冠荣电子有限公司

1.2A, 600V N-CHANNEL POWER MOSFET

The UTC 1N60P is a high voltage power MOSFET and isdesigned to have better characteristics, such as fast switchingtime, low gate charge, low on-state resistance and a high ruggedavalanche characteristic. This power MOSFET is usually used athigh speed switching applications of power supplies, PWM mot • RDS(ON) =11.5Ω@VGS = 10V.\n• Ultra Low gate charge (typical 5.0nC)\n• Low reverse transfer capacitance (CRSS = typical 3.0 pF)\n• Fast switching capability\n• Avalanche energy specified\n• Improved dv/dt capability, high ruggedness;

UTC

友顺

肖特基二极管

CBI

创基电子

肖特基二极管

CBI

创基电子