40V Detection switch tube

文件：365.394 Kbytes 页数：2 Pages

SUNMATE

森美特

PDF上传者：深圳冠荣电子有限公司

SILICON SCHOTTKY BARRIER DIODE

文件：75.86 Kbytes 页数：1 Pages

DGNJDZ

南晶电子

SMALL SIGNAL SCHOTTKY DIODES

文件：72.98 Kbytes 页数：3 Pages

JINGHENG

晶恒

1.2A, 600V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 1N60P is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristic. This power MOSFET is usually used at high speed switching applications of powe

文件：274.99 Kbytes 页数：6 Pages

UTC

友顺

1.2A, 600V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 1N60P is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristic. This power MOSFET is usually used at high speed switching applications of powe

文件：274.99 Kbytes 页数：6 Pages

UTC

友顺

1.2A, 600V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 1N60P is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristic. This power MOSFET is usually used at high speed switching applications of powe

文件：274.99 Kbytes 页数：6 Pages

UTC

友顺

1.2A, 600V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 1N60P is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristic. This power MOSFET is usually used at high speed switching applications of powe

文件：274.99 Kbytes 页数：6 Pages

UTC

友顺

1.2A, 600V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 1N60P is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristic. This power MOSFET is usually used at high speed switching applications of powe

文件：274.99 Kbytes 页数：6 Pages

UTC

友顺

1.2A, 600V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 1N60P is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristic. This power MOSFET is usually used at high speed switching applications of powe

文件：274.99 Kbytes 页数：6 Pages

UTC

友顺

Schottky Barrier Diode

FEATURES • High reliability • Low forward voltage and reverse current APPLICATIONS • For electronic calculator, etc. • Low current rectification and high speed switching

文件：233.38 Kbytes 页数：3 Pages

SEMTECH_ELEC

先之科半导体