1.2A, 600V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 1N60P is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristic. This power MOSFET is usually used at high speed switching applications of powe

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UTC

友顺

Schottky Barrier Rectifier

Features • High Reliability • Low Reverse Current and Low Forward Voltage · Marking : Cathode band and type number • Lead Free Finish/Rohs Compliant (Note1) (PSuffix designates Compliant. See ordering information) • Moisture Sensitivity Level 1 Maximum Ratings • Storage &

文件：419.26 Kbytes 页数：3 Pages

MCC

POINT CONTACT GERMANIUM DIODE

Point Contact Germanium Diodes 1N60 is a point contact diode employing N-from Germanium and gives an efficient and excellent linearity when used in TV image detection, FM detection, radio, AM detection, etc.

文件：88.26 Kbytes 页数：2 Pages

SEMTECH

先之科

Schottky Barrier Diodes SMALL SIGNAL SCHOTTKY DIODES 30m/50m AMPERES 40/45VOLTS

Features: * High Reliability * Low Reverse Current and Low Forward Voltage Applications: * Low Current Rectification and High Speed Switching

文件：239.88 Kbytes 页数：2 Pages

WEITRON

SMALL SIGNAL SCHOTTKY DIODES

Features ◇ Metal sillicon junction majority carrier conduction ◇ High current capability,Low forward voltage drop ◇ Extremely low reverse current IR ◇ Ultra speed switching characteristics ◇ Small temperature coefficient of forward characteristics ◇ Satisfactory wave detection efficiency ◇

文件：139.82 Kbytes 页数：2 Pages

BILIN

银河微电

GERMANIUM DIODES

Features · Metal silicon junction, majority carrier conduction · High current capability, Low forward voltage drop · Extremely low reverse current lR · Ultra speed switching characteristics · Small temperature coefficient of forward characteristics · Satisfactory Wave detection e

文件：310.86 Kbytes 页数：2 Pages

DAESAN

TECHNICAL SPECIFICATIONS OF SMALL SIGNAL SCHOTTKY DIODES

FEATURES * Metal silicon junction, majority carrier conduction. * High current capability, low forward voltage drop. * Extremely low reverse current IR * Ultra speed switching characteristics * Small temperature coefficient of forward characteristics * Satisfactory Wave detection efficiency

文件：62.03 Kbytes 页数：2 Pages

DCCOM

道全

SMALL SIGNAL SCHOTTKY DIODE

FEATURES ● Metal-on-silicon junction, majority carrier conduction ● High current capability, Low forward voltage drop ● Extremely low reverse current Ir ● Ultra speed switching characteristics ● Small temperature coefficient of forward characteristics ● Satisfactory Wave detectio

文件：947.3 Kbytes 页数：2 Pages

DIOTECH

Schottky Barrier Diode

Features 1. High reliability 2. Low reverse current and low forward voltage Applications Low current rectification and high speed switching Construction Silicon epitaxial planar

文件：80.99 Kbytes 页数：2 Pages

FORMOSA

美丽微半导体

SMALL SIGNAL SCHOTTKY DIODES

FEATURES • Metal-on-silicon junction, majority carrier conduction • High current capability, Low forward voltage drop • Extremely low reverse current IR • Ultra speed switching characteristics • Small temperature coefficient of forward characteristics • Satisfactory wave detection efficiency

文件：72.86 Kbytes 页数：3 Pages

JINANJINGHENG

晶恒集团