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1N60PW

Schottky Barrier Diode

FEATURES •Highreliability •Lowforwardvoltageandreversecurrent APPLICATIONS •Forelectroniccalculator,etc. •Lowcurrentrectificationandhighspeedswitching

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技(东莞)有限公司

1N60PW

Silicon Schottky Barrier Diode

Features ●Metalsiliconjunction,majoritycarrierconduction ●Idealforusedindetectionorforswitchingontheradio,TV,etc.

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

1N60PW

45V Detection switch tube

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

PDF上传者:深圳市福田区吉富昌电子商行

1N60PW

SCHOTTKY BARRIER DIODE

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

PDF上传者:深圳市福田区吉富昌电子商行

1N60PWS

SCHOTTKY BARRIER DIODE

Features •Highreliability •Lowforwardvoltageandreversecurrent Applications •Forelectroniccalculator,etc. •Lowcurrentrectificationandhighspeedswitching

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技(东莞)有限公司

1N60PWS

SCHOTTKY BARRIER DIODE

Features ●Highreliability ●Lowforwardvoltageandreversecurrent MechanicalData ●Case:SOD-323,MoldedPlastic ●Terminals:PlatedLeadsSolderableperMIL-STD-202,Method208 ●Polarity:CathodeBand ●Weight:0.004grams(approx.) ●Marking:A3

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

1N60PWS

SCHOTTKY BARRIER DIODE

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

PDF上传者:深圳市福田区吉富昌电子商行

1N60

GOLDBONDEDGERMANIUMDIODE

GermaniumGlassDiode Features •GermaniumGlassDiode •RoHSCompliance

ETCList of Unclassifed Manufacturers

未分类制造商

1N60

SiliconAvalancheDiodes-1500WattMetalAxialLeadedTransientVoltageSuppressors

FEATURES •Hermeticallysealed •Breakdownvoltagerange6.8-200volts •Glasspassivatedjunction •Excellentclampingcapability •Lowzenerimpedance •100surgetested •-55°Cto+150°C •Bi-directional MAXIMUMRATING •PeakPulsePower(Ppk):15000Watts(10x1000µs)@25°C(seedi

LittelfuseLittelfuse Inc.

力特力特公司

1N60

SchottkyBarrierDiode

Features 1.Highreliability 2.Lowreversecurrentandlowforwardvoltage Applications Lowcurrentrectificationandhighspeedswitching Construction Siliconepitaxialplanar

FORMOSAFormosa MS

美丽微半导体美丽微半导体股份有限公司

1N60

JEDECDO-7PACKAGE

JEDECDO-7PACKAGE

ETC1List of Unclassifed Manufacturers

未分类制造商

1N60

1.2Amps,600VoltsN-CHANNELMOSFET

DESCRIPTION TheUTC1N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpow

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

1N60

GERMANIUMDIODES

Features ·Metalsiliconjunction,majoritycarrierconduction ·Highcurrentcapability,Lowforwardvoltagedrop ·ExtremelylowreversecurrentlR ·Ultraspeedswitchingcharacteristics ·Smalltemperaturecoefficientofforwardcharacteristics ·SatisfactoryWavedetectione

DAESAN

Daesan Electronics Corp.

1N60

SMALLSIGNALSCHOTTKYDIODE

VOLTAGERANGE:40V CURRENT:0.03A FEATURES Metalsilliconjunctionmajoritycarrierconduction Highcurrentcapability,lowforwardvoltagedrop ExtremelylowreversecurrentIR Ultraspeedswitchingcharacteristics Smalltemperaturecoefficientofforwardcharacteristics

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

1N60

SchottkyBarrierDiodesSMALLSIGNALSCHOTTKYDIODES30m/50mAMPERES40/45VOLTS

Features: *HighReliability *LowReverseCurrentandLowForwardVoltage Applications: *LowCurrentRectificationandHighSpeedSwitching

WEITRONWEITRON

威堂電子科技

1N60

600VN-ChannelMOSFET

Features •HighReliability •LowReverseCurrentandLowForwardVoltage ·Marking:Cathodebandandtypenumber •MoistureSensitivity:Level1perJ-STD-020C MaximumRatings •Storage&OperatingJunctionTemperature:-65℃to+125℃

TGS

Tiger Electronic Co.,Ltd

1N60

SchottkyBarrierRectifier

Features •HighReliability •LowReverseCurrentandLowForwardVoltage ·Marking:Cathodebandandtypenumber •MoistureSensitivity:Level1perJ-STD-020C MaximumRatings •Storage&OperatingJunctionTemperature:-65℃to+125℃

TGS

Tiger Electronic Co.,Ltd

1N60

SMALLSIGNALSCHOTTKYDIODES

FEATURES •Metal-on-siliconjunction,majoritycarrierconduction •Highcurrentcapability,Lowforwardvoltagedrop •ExtremelylowreversecurrentIR •Ultraspeedswitchingcharacteristics •Smalltemperaturecoefficientofforwardcharacteristics •Satisfactorywavedetectionefficiency

JINANJINGHENGJinan Jingheng (Group) Co.,Ltd

晶恒集团济南晶恒电子有限责任公司

1N60

SMALLSIGNALSCHOTTKYDIODE

FEATURES ●Metal-on-siliconjunction,majoritycarrierconduction ●Highcurrentcapability,Lowforwardvoltagedrop ●ExtremelylowreversecurrentIr ●Ultraspeedswitchingcharacteristics ●Smalltemperaturecoefficientofforwardcharacteristics ●SatisfactoryWavedetectio

DIOTECH

Diotech Company.

1N60

1.2Amps,600/650VoltsN-CHANNELMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

详细参数

  • 型号:

    1N60PW

  • 制造商:

    SEMTECH_ELEC

  • 制造商全称:

    SEMTECH ELECTRONICS LTD.

  • 功能描述:

    Schottky Barrier Diode

供应商型号品牌批号封装库存备注价格
ST(先科)
22+
SOD-123
10000
只做原装现货 假一赔万
询价
ST/先科
2021+
SOD-123
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
ST
22+
SOD-123
16900
正规渠道,只有原装!
询价
ST(先科)
23+
NA
70
肖特基二极管
询价
ST
23+
NA
100
现货!就到京北通宇商城
询价
ST
22+
SOD-123
16900
支持样品 原装现货 提供技术支持!
询价
ST/先科
2270
22+
56000
全新原装进口,假一罚十
询价
ST/意法
2122+
DO-35
17870
全新原装正品现货,假一赔十
询价
UTC
23/22+
SOT223
6000
20年老代理.原厂技术支持
询价
UTC/友顺
2021+
TO252
100000
原装现货
询价
更多1N60PW供应商 更新时间2024-4-30 14:10:00