SCHOTTKY BARRIER DIODES

SCHOTTKY BARRIER DIODES LEADLESS PACKAGE FOR SURFACE MOUNT Qualified per MIL-PRF-19500/444

文件：36.02 Kbytes 页数：2 Pages

MICROSEMI

美高森美

SCHOTTKY BARRIER DIODES LEADLESS PACKAGE FOR SURFACE MOUNT

SCHOTTKY BARRIER DIODES LEADLESS PACKAGE FOR SURFACE MOUNT Qualified per MIL-PRF-19500/444

文件：55.97 Kbytes 页数：2 Pages

MICROSEMI

美高森美

SCHOTTKY BARRIER DIODES

DESCRIPTION This Schottky barrier diode is metallurgically bonded and offers military grade qualifications for high-reliability applications on “1N” prefixed numbers. This small diode is hermetically sealed and bonded into a DO-35 glass package. FEATURES • JEDEC registered 1N5711-1, 1N5712-1, 1

文件：67.45 Kbytes 页数：3 Pages

MICROSEMI

美高森美

SCHOTTKY BARRIER SWITCHING DIODE

Features ● Ultra-Fast Switching Speed ● High Reverse Breakdown Voltage ● Low Forward Voltage Drop ● Guard Ring Junction Protection

文件：49.52 Kbytes 页数：2 Pages

DIODES

美台半导体

SCHOTTKY BARRIER DIODES

VRRM : 70V , 60V FEATURES : • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diode

文件：36.05 Kbytes 页数：2 Pages

EIC

Small-Signal Diode Schottky Diodes

Features ◆ For general purpose applications ◆ Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching

文件：126.35 Kbytes 页数：2 Pages

GOOD-ARK

固锝电子

SMALL SIGNAL SCHOTTKY DIODES

VOLTAGE RANGE: 70V POWER DISSIPATION: 400 mW FEATURES ◇ For general purpose applications ◇ fast switching and low logic level applications Metal silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching m ake it i

文件：269.1 Kbytes 页数：2 Pages

DSK

SMALL SIGNAL SCHOTTKY DIODES

FEATURES • For general purpose applications • Metal-on-silicon junction Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast

文件：54.16 Kbytes 页数：2 Pages

JINGHENG

晶恒

Schottky Barrier Diodes for General Purpose Applications

Description The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage. Packaged in a low cost glass package, they are well suited for high level detecting, mixing, switching, gating, log or A-D conv

文件：56.87 Kbytes 页数：6 Pages

HP

安捷伦

SMALL SIGNAL SCHOTTKY DIODES

FEATURES For general purpose applications fast switching and low logic level applications Metal s ilicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices,steering,biasing and co

文件：426.01 Kbytes 页数：2 Pages

SAMYANG

三阳电子