1N5711资料使用说明书批发供应达尔科技-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业
1N5711	文件：52.1 Kbytes Page：3 Pages	SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metaltosiliconjunctiondiodefeaturinghighbreakdown,lowturn-onvoltageandultrafastswitching.PrimarlyintendedforhighlevelUHF/VHFdetectionandpulseapplicationwithbroaddynamicrange. Matchedbatchesareavailableonrequest.	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团
1N5711	文件：25.59 Kbytes Page：2 Pages	SCHOTTKY BARRIER DIODES •1N5711-1AVAILABLEINJAN,JANTX,JANTXVANDJANSPERMIL-PRF-19500/444 •1N5712-1AVAILABLEINJAN,JANTX,JANTXVANDJANSPERMIL-PRF-19500/445 •SCHOTTKYBARRIERDIODES •HERMETICALLYSEALED •METALLURGICALLYBONDED	CDI-DIODE Compensated Deuices Incorporated
1N5711	文件：49.52 Kbytes Page：2 Pages	SCHOTTKY BARRIER SWITCHING DIODE Features ●Ultra-FastSwitchingSpeed ●HighReverseBreakdownVoltage ●LowForwardVoltageDrop ●GuardRingJunctionProtection	DIODESDiodes Incorporated 达尔科技
1N5711	文件：99.85 Kbytes Page：2 Pages	Schottky Diodes Features •Forgeneralpurposeapplications •Metal-on-siliconSchottkybarrierdevicewhichis protectedbyaPNjunctionguardring.Thelowfor wardvoltagedropandfastswitchingmakeitideal forprotectionofMOSdevices,steering,biasing andcouplingdiodesforfastswit	GE GE Industrial Company
1N5711	文件：56.87 Kbytes Page：6 Pages	Schottky Barrier Diodes for General Purpose Applications Description The1N5711,1N5712,5082-2800/10/11arepassivatedSchottkybarrierdiodeswhichuseapatented“guardring”designtoachieveahighbreakdownvoltage.Packagedinalowcost glasspackage,theyarewellsuitedforhighleveldetecting,mixing,switching,gating,logorA-Dconv	HPAgilent(Hewlett-Packard) 安捷伦科技安捷伦科技有限公司
1N5711	文件：110.08 Kbytes Page：2 Pages	Schottky Barrier Switching Diode Features •MoistureSensitivity:Level1perJ-STD-020C •HighReverseBreakdownVoltage •LowForwardVoltageDrop •ForGeneralPurposeApplication •Marking:Cathodebandandtypenumber •LeadFreeFinish/RohsCompliant(Note1)(PSuffixdesignates Compliant.Seeorderinginformation	MCCMicro Commercial Components 美微科美微科半导体公司
1N5711	文件：36.02 Kbytes Page：2 Pages	SCHOTTKY BARRIER DIODES SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT QualifiedperMIL-PRF-19500/444	MicrosemiMicrosemi Corporation 美高森美美高森美公司
1N5711	文件：126.35 Kbytes Page：2 Pages	Small-Signal Diode Schottky Diodes Features ◆Forgeneralpurposeapplications ◆Metal-on-siliconSchottkybarrierdevicewhichisprotectedbya PNjunctionguardring.Thelowforwardvoltagedropandfast switchingmakeitidealforprotectionofMOSdevices,steering, biasingandcouplingdiodesforfastswitching	Good-Ark Good-Ark
1N5711	文件：46.24 Kbytes Page：2 Pages	SMALL SIGNAL SCHOTTKY DIODES VOLTAGERANGE:70VPOWERDISSIPATION:400mW FEATURES ◇Forgeneralpurposeapplications ◇fastswitchingandlowlogiclevelapplications Metalsiliconschottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeiti	BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司
1N5711	文件：82.78 Kbytes Page：2 Pages	400 mWatt Small Signal Schottky Diode 60 to 70 Volts Features •HighReverseBreakdownVoltage •LowForwardVoltageDrop •ForGeneralPurposeApplication	CHENYIShanghai Lunsure Electronic Tech 商朗电子上海商朗电子科技有限公司
1N5711	文件：30.8 Kbytes Page：2 Pages	SCHOTTKY BARRIER DIODES VRRM:70V,60V FEATURES: •Forgeneralpurposeapplications •Metal-on-siliconSchottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitidealforprotectionof MOSdevices,steering,biasingandcouplingdiode	SYNSEMI SynSemi，Inc.
1N5711	文件：56.73 Kbytes Page：2 Pages	SMALL SIGNAL SCHOTTKY DIODES FEATURES •Forgeneralpurposeapplications •Metal-on-siliconjunctionSchottkybarrierdevicewhichisprotectedbya PNjunctionguardring.Thelowforwardvoltagedropandfastswitching makeitidealforprotectionofMOSdevices,steering,biasingand couplingdiodesforfast	JINANJINGHENGJinan Jingheng (Group) Co.,Ltd 晶恒集团济南晶恒电子有限责任公司
1N5711	文件：36.05 Kbytes Page：2 Pages	SCHOTTKY BARRIER DIODES VRRM:70V,60V FEATURES: •Forgeneralpurposeapplications •Metal-on-siliconSchottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitidealforprotectionof MOSdevices,steering,biasingandcouplingdiode	EIC EIC
1N5711	文件：55.97 Kbytes Page：2 Pages	SCHOTTKY BARRIER DIODES LEADLESS PACKAGE FOR SURFACE MOUNT SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT QualifiedperMIL-PRF-19500/444	MicrosemiMicrosemi Corporation 美高森美美高森美公司
1N5711	文件：67.45 Kbytes Page：3 Pages	SCHOTTKY BARRIER DIODES DESCRIPTION ThisSchottkybarrierdiodeismetallurgicallybondedandoffersmilitarygradequalificationsforhigh-reliabilityapplicationson“1N”prefixednumbers.ThissmalldiodeishermeticallysealedandbondedintoaDO-35glasspackage. FEATURES •JEDECregistered1N5711-1,1N5712-1,1	MicrosemiMicrosemi Corporation 美高森美美高森美公司
1N5711	文件：124.62 Kbytes Page：1 Pages	Schottky Barrier Diodes for General Purpose Applications Description/Applications The1N5711,1N5712,5082-2800/10/11arepassivatedSchottkybarrierdiodeswhichuseapatented“guardring”designtoachieveahighbreakdownvoltage.Packagedinalowcostglasspackage,theyarewellsuitedforhighleveldetecting,mixing,switching,gating,logor	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司
1N5711	文件：128.49 Kbytes Page：4 Pages	400 mWatt Small Signal Schottky Diode 60 to 70 Volts Features •MoistureSensitivity:Level1perJ-STD-020C •HighReverseBreakdownVoltage •LowForwardVoltageDrop •ForGeneralPurposeApplication •Marking:Cathodebandandtypenumber •LeadFreeFinish/RohsCompliant(Note1)(PSuffixdesignates Compliant.Seeorderinginformation	MCCMicro Commercial Components 美微科美微科半导体公司
1N5711	文件：217.69 Kbytes Page：2 Pages	15mA Axial Leaded Schottky Barrier Diodes Features ●Forgeneralpurposeapplications ●Metal-on-siliconSchottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitidealforprotectionof MOSdevices,steering,biasingandcouplingdiodesfor fastswitc	SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司
1N5711	文件：264.7 Kbytes Page：7 Pages	Pico Second Switching Speed Description/Applications The1N5711,1N5712,5082-2800/10/11arepassivatedSchottkybarrierdiodeswhichuseapatented“guardring”designtoachieveahighbreakdownvoltage.Packagedinalowcostglasspackage,theyarewellsuitedforhighleveldetecting,mixing,switching,gating,logor	AVAGOAvago 安华高安华高科技
1N5711	文件：498.37 Kbytes Page：3 Pages	General Purpose Axial Lead Glass Packaged Schottky Diodes DescriptionandApplications Thesesilicondiodesarepackagedinahermeticaxialleadglasspackage.Varioususesincludedetecting,mixingandswitchingatlowpowerlevels.Theyaresuitableforcommercialswitchingalongwithcontrolfunctionsinnarrowbandreceivers.Thesediodescanalso	MA-COM M/A-COM Technology Solutions, Inc.

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产品属性

产品编号：
1N5711
制造商：
Broadcom Limited
类别：
分立半导体产品 > 二极管 - 射频
包装：
卷带（TR）
二极管类型：
肖特基 - 单
电压 - 峰值反向（最大值）：
70V
不同 Vr、F 时电容：
2pF @ 0V，1MHz
工作温度：
-65°C ~ 200°C（TJ）
封装/外壳：
DO-204AH，DO-35，轴向
描述：
RF DIODE SCHOTTKY 70V 250MW

供应商	型号	品牌	批号	封装	库存	备注	价格
中天科工半导体（深圳）有限公司	1N5711	STMicroelectronics	23+	DO-204AH,DO-35,轴向	30000	二极管-分立半导体产品-原装正品	询价
深圳市能元时代电子有限公司	1N5711	ST/意法	23+	NA	28650	主营品牌深圳百分百原装现货假一罚十绝对价优	询价
深圳市芯巴巴科技有限公司	1N5711	ST(意法半导体)	22+	DO-35	10000	只做原装现货假一赔万	询价
深圳市芯祺盛科技有限公司	1N5711	ST	06+	二极管	635	原装库存有订单来谈优势	询价
深圳市科恒伟业电子有限公司	1N5711	Agilent	21+	VQFN	9800	只做原装正品假一赔十!正规渠道订货!	询价
深圳市天诺拓展科技有限公司	1N5711	ST	21+	NA	4467	全新原装支持BOM配单	询价
深圳市能创芯电子科技有限公司	1N5711	ST	23+	二极管	16800	进口原装现货	询价
深圳市振鑫微电子科技有限公司	1N5711	ST	23+	二极管	50000	全新原装现货热卖	询价
深圳市明嘉莱科技有限公司	1N5711	ST/意法	24+	DO-35	860000	明嘉莱只做原装正品现货	询价
深圳兆威电子有限公司	1N5711	Diodes	22+	SOD-123	4000	原装现货假一赔十	询价

更多1N5711供应商更新时间2024-4-19 19:58:00

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