GOLD BONDED DIODES(Low forward voltage, low power consumption)

JEDEC DO-7 PACKAGE

文件：2.01743 Mbytes 页数：59 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Schottky Diodes

Features • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low for ward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast swit

文件：99.85 Kbytes 页数：2 Pages

GE

SMALL SIGNAL SCHOTTKY DIODES

FEATURES • For general purpose applications • Metal-on-silicon junction Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast

文件：56.73 Kbytes 页数：2 Pages

JINANJINGHENG

晶恒集团

400 mWatt Small Signal Schottky Diode 60 to 70 Volts

Features • High Reverse Breakdown Voltage • Low Forward Voltage Drop • For General Purpose Application

文件：82.78 Kbytes 页数：2 Pages

CHENYI

商朗电子

Schottky Barrier Diodes for General Purpose Applications

Description/Applications The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage. Packaged in a low cost glass package, they are well suited for high level detecting, mixing, switching, gating, log or

文件：124.62 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SCHOTTKY BARRIER DIODES

VRRM : 70V , 60V FEATURES : • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diode

文件：30.8 Kbytes 页数：2 Pages

SYNSEMI

Small Signal Schottky Diodes

VOLTAGE RANGE: 70V POWER DISSIPATION: 400 mW Features ◇ For general purpose applications ◇ fast switching and low logic level applications Metal silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching m ake it i

文件：137.65 Kbytes 页数：2 Pages

LUGUANG

鲁光电子

70V 15mA Schottky Diode

Features: Picose cond switching speed Low forward voltage drop 70V breakdown voltage Guard-Ring for over-voltage protection High reliability tested grades & matched characteristic options.

文件：366.24 Kbytes 页数：3 Pages

SS

SMALL SIGNAL SCHOTTKY DIODE

DESCRIPTION Metal to silicon junction diode featuring high breakdown, low turn-on voltage and ultrafast switching. Primarly intended for high level UHF/VHF detection and pulse application with broad dynamic range. Matched batches are available on request.

文件：52.1 Kbytes 页数：3 Pages

STMICROELECTRONICS

意法半导体

SCHOTTKY DIODES

SCHOTTKY DIODES • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices.

文件：433.18 Kbytes 页数：3 Pages

DIGITRON