丝印：15L；Package：SOD-123FL；Schottky Barrier Rectifiers, Surface Mount, 1 A, 50 V - 150 V

Features • Low Power Loss, High Efficiency • Guard Ring for Overvoltage Protection • High Surge Current Capability • UL Flammability 94V−0 Classification • MSL 1 per J−STD−020 • Green Molding Compound • These Devices are Pb−Free and are RoHS Compliant

文件：168.64 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：15LC；Package：SOD-323；TVS ARRAY

Protects 3.3, 5, 8, 12, 15, 18, 24V Components 350 Watts Peak Pulse Power per Line (tp = 8/20μs) Unidirectional Configurations Replacement for MLV (0805) Protects One Power or I/O Port Low Clamping Voltage Terminals finish: 100% Pure Tin “-A” is an AEC-Q101 qualified device This is a P

文件：239.59 Kbytes 页数：3 Pages

SMCDIODE

桑德斯微电子

丝印：15L100；Package：LFPAK56；N-channel 100 V, 15 m廓 logic level MOSFET in LFPAK56

文件：726.68 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

15 Ampere,50 Volt Trench Process Low Vf Schottky Barrier Rectifier

Features  Low forward voltage drop  ThinkiSemi matured trench barrier schottky  High current capability  High surge current capability  Low reverse leakage current Application Inverter/UPS/Converter/BMS Photovoltaic Solar Cell Protection/SMPS Battery Reverse Protection Circuit

文件：1.28755 Mbytes 页数：3 Pages

THINKISEMI

思祁半导体

Trench MOS Barrier Schottky Rectifier

文件：755.64 Kbytes 页数：3 Pages

YFWDIODE

佑风微电子

Trench MOS Barrier Schottky Rectifier

文件：731.88 Kbytes 页数：3 Pages

YFWDIODE

佑风微电子

Trench MOS Barrier Schottky Rectifier

文件：1.24076 Mbytes 页数：3 Pages

YFWDIODE

佑风微电子

Trench MOS Barrier Schottky Rectifier

文件：573.12 Kbytes 页数：3 Pages

YFWDIODE

佑风微电子

Trench MOS Barrier Schottky Rectifier

文件：676.19 Kbytes 页数：3 Pages

YFWDIODE

佑风微电子

Trench MOS Barrier Schottky Rectifier

文件：679.19 Kbytes 页数：3 Pages

YFWDIODE

佑风微电子