丝印：15N10；Package：TO-252；The 15N10 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

Features VDS = 100V,ID =15A RDS(ON),95 mΩ(Typ) @ VGS =10V RDS(ON), 100mΩ(Typ) @ VGS =4.5V Low Total Gate Charge Low Reverse Transfer Capacitance Improved dv/dt Capability Fast Switching Speed

文件：660.16 Kbytes 页数：5 Pages

UMW

友台半导体

丝印：15N10；Package：TO-252；N-Ch Enhancement Mode Power MOSFET

文件：219.61 Kbytes 页数：4 Pages

SECOS

喜可士

丝印：15N10TFYWCP；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The 15N10 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other switching application. Application Battery switch DC/DC converter

文件：3.75984 Mbytes 页数：5 Pages

TUOFENG

拓锋半导体

丝印：15N10BTFYWCP；Package：TO-252；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The 15N10B TO-252 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power suppl

文件：3.21424 Mbytes 页数：6 Pages

TUOFENG

拓锋半导体

丝印：15N10GTFYWCP；Package：TO-252；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The 15N10G uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other switching application. Application Battery switch DC/DC converter

文件：3.69049 Mbytes 页数：5 Pages

TUOFENG

拓锋半导体

丝印：15N10NM5；Package：PG-HDSOP-16；OptiMOSTM 5 Power-Transistor, 100 V

文件：1.42013 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：15N10A；Package：TO-220；100V N-Channel DTMOS

文件：660.79 Kbytes 页数：7 Pages

WUMC

紫光国微

丝印：15N10；Package：TO-252；The 15N10 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

Features VDS = 100V,ID =15A RDS(ON),95 mΩ(Typ) @ VGS =10V RDS(ON), 100mΩ(Typ) @ VGS =4.5V Low Total Gate Charge Low Reverse Transfer Capacitance Improved dv/dt Capability Fast Switching Speed

文件：660.16 Kbytes 页数：5 Pages

UMW

友台半导体

丝印：15N10TFYWCP；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The 15N10 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other switching application. Application Battery switch DC/DC converter

文件：3.75984 Mbytes 页数：5 Pages

TUOFENG

拓锋半导体

丝印：15N10BTFYWCP；Package：TO-252；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The 15N10B TO-252 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power suppl

文件：3.21424 Mbytes 页数：6 Pages

TUOFENG

拓锋半导体