15N10

Marking：15N10；Package：TO-252；The 15N10 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

Features VDS=100V,ID=15A RDS(ON),95mΩ(Typ)@VGS=10V RDS(ON),100mΩ(Typ)@VGS=4.5V LowTotalGateCharge LowReverseTransferCapacitance Improveddv/dtCapability FastSwitchingSpeed

SSD15N10-C

Marking：15N10；Package：TO-252；N-Ch Enhancement Mode Power MOSFET

15N10

Marking：15N10TFYWCP；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The15N10usesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatechargeandoperationwithgate voltagesaslowas4.5V.Thisdeviceissuitableforuseasa Batteryprotectionorinotherswitchingapplication. Application Batteryswitch DC/DCconverter

15N10B

Marking：15N10BTFYWCP；Package：TO-252；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The15N10BTO-252usesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. Application ●Powerswitchingapplication ●Hardswitchedandhighfrequencycircuits ●Uninterruptiblepowersuppl

15N10G

Marking：15N10GTFYWCP；Package：TO-252；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The15N10Gusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatechargeandoperationwithgate voltagesaslowas4.5V.Thisdeviceissuitableforuseasa Batteryprotectionorinotherswitchingapplication. Application Batteryswitch DC/DCconverter

IPTC015N10NM5

Marking：15N10NM5；Package：PG-HDSOP-16；OptiMOSTM 5 Power-Transistor, 100 V

TSP15N10A

Marking：15N10A；Package：TO-220；100V N-Channel DTMOS