丝印：15NC；Package：WDFN8；MOSFET ??Power, Single, N-Channel 40 V, 17.3 m, 27 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant

文件：206.82 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：15NC；Package：WDFN8；MOSFET ??Power, Single N-Channel 40 V, 17.3 m, 27 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFWS015N04C − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：209.14 Kbytes 页数：7 Pages

ONSEMI

安森美半导体