丝印：15N08；Package：PDFN3.3X3.3-8L；N-Channel Enhancement Mode MOSFET

Features Advanced trench cell design Low Thermal Resistance BV ≥ 80 V ID ≤ 15 A Ptot $ 35 W RDS(ON) ≤ 15.5 m2 @ VGs = 10 V RDS(ON) ≤ 18.5 mQ @ VGs = 6 V RDS(ON) ≤ 22.5 m2 @ VGs = 4.5 V

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