N-channel 100 V, 15 mΩ logic level MOSFET in LFPAK56

Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment. • Advanced TrenchMOS provides low RDSon and low gate charge\n• Avalanche rated, 100 % tested\n• LFPAK provides maximum power density in a Power SO8 package;

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安世

丝印：15L100；Package：LFPAK56；N-channel 100 V, 15 m廓 logic level MOSFET in LFPAK56

文件：726.68 Kbytes 页数：13 Pages

NEXPERIA

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NextPower 100 V, 15.5 mOhm N-channel MOSFET in LFPAK56 package

1. General description NextPower 100 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications. 2. Features and benefits • Low Qrr for higher efficiency and lower spiking • Low QG × RDSon FOM for high efficiency switching applications •

文件：332.13 Kbytes 页数：14 Pages

NEXPERIA

安世

N-channel TrenchMOS transistor

GENERAL DESCRIPTION SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating. FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance Applications:-

文件：102.98 Kbytes 页数：9 Pages

PHI

飞利浦

N-channel TrenchMOS transistor

文件：146.19 Kbytes 页数：9 Pages

PHI

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