丝印：15FS10Y；Package：SOT669；NextPower 100 V, 15.5 mOhm N-channel MOSFET in LFPAK56 package

1. General description NextPower 100 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications. 2. Features and benefits • Low Qrr for higher efficiency and lower spiking • Low QG × RDSon FOM for high efficiency switching applications •

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NEXPERIA

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NextPower 100 V, 14.7 mOhm N-channel MOSFET in LFPAK56 package

NextPower 100 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications. • Low Qrr for higher efficiency and lower spiking\n• Low QG × RDSon FOM for high efficiency switching applications\n• Strong avalanche energy rating (EAS)\n• Avalanche rated and 100% tested\n• Ha-free and RoHS compliant LFPAK56 package\n• Wave-solderable LFPAK56 package;

Nexperia

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N-channel TrenchMOS transistor

GENERAL DESCRIPTION SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating. FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance Applications:-

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PHI

PHI

N-channel TrenchMOS transistor

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PHI

PHI