PSMN014-40HLD

Marking：14DS40H；Package：LFPAK56D；N-channel 40 V, 13.6 mOhm, logic level MOSFET in LFPAK56D using NextPowerS3 technology

Generaldescription DuallogiclevelN-channelMOSFETinanLFPAK56D(DualPower-SO8)packageusing NextPowerS3technology. Featuresandbenefits •DualMOSFET •Repetitiveavalancherated •HighreliabilityLFPAK56Dpackage •Copper-clip,solderdieattach •Qualifiedto175°C Appli

PSMN014-60HS

Marking：14RS60H；Package：LFPAK56D；N-channel 60 V, 14 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology

Generaldescription DualstandardlevelN-channelMOSFETinanLFPAK56D(DualPower-SO8)packageusing TrenchMOStechnology. Featuresandbenefits •DualMOSFET •Repetitiveavalancherated •HighreliabilityLFPAK56Dpackage •Copper-clip,solderdieattach •Qualifiedto175°C Appl

PSMQC144N10LS2

Marking：144N10LS；Package：DFN5060-8L；100V N-Channel Enhancement Mode MOSFET

Feature RDS(ON)

RB160VAM-40TR

Marking：14.X；Package：SOD323HE；Schottky barrier diode

Features ©Generalrectification ®LowVeLows ©Highreliability

RB501V-40TW

Marking：140；Package：SOT-363；SURFACE MOUNT SCHOTTKY DIODES

FEATURES ExtremelyFastSwitchingSpeed Surfacemountpackageideallysuitedforautomaticinsertion LeadfreeincompliancewithEURoHS2011/65/EUdirective GreenmoldingcompoundasperIEC61249Std.. (HalogenFree)

RFD14N05L

Marking：14N05L；Package：TO-252；60V N-Channel MOSFET

Features CanbeDrivenDirectlyfromCMOS,NMOS,and TTLCircuits PeakCurrentvsPulseWidthCurve •175℃OperatingTemperature VDS(V)=60V ••RDS(ON)

RFD14N05LSM

Marking：14N05L；Package：TO-252；60V N-Channel MOSFET

Features CanbeDrivenDirectlyfromCMOS,NMOS,and TTLCircuits PeakCurrentvsPulseWidthCurve •175℃OperatingTemperature VDS(V)=60V ••RDS(ON)

RM140N150BHD

Marking：140N150；Package：TO-263；150V N-Ch Power MOSFET

Feature ®HighSpeedPowerSwitching ®EnhancedBodydiodedvidicapabilly ©100UIStested ®Pb-freeleadplating

RM140N150BHD

Marking：140N150；Package：TO-247；150V N-Ch Power MOSFET

Feature HighSpeedPowerSwitching EnhancedBodydiodedvidtcapability 100UIStested Pb-freeleadplating

RM140N150BT2

Marking：140N150；Package：TO-263；150V N-Ch Power MOSFET

Feature HighSpeedPowerSwitching EnhancedBodydiodedvidtcapability 100UIStested Pb-freeleadplating