丝印：140IFBE；Package：SOT8075-1；650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package

1. General description The GAN140-650FBE is a general purpose 650 V, 140 mΩ Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm surface mount package. It is a normally-off e-mode device offering superior performance. 2. Features and benefits • Enhancement mode - normally-off power switch • Ultra

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