STF140N10F4

Marking：140N10F4；Package：TO-220FP；N-channel 100 V, 5.2 mΩ, 60 A TO-220, D2PAK, TO-220FP STripFET™ DeepGATE™ Power MOSFET

Features ■Exceptionaldv/dtcapability ■Extremelylowon-resistanceRDS(on) ■100avalanchetested Application ■Switchingapplications Description ThisPowerMOSFETisamongthelatest developmentsthatuseanadvancedtechnology (STripFET™DeepGATE™technology),which hasbeenes

STF14N80K5

Marking：14N80K5；Package：TO-220FP；N-channel 800 V, 0.400 Ω typ., 12 A MDmesh™ K5 Power MOSFETs in TO-220FP and I²PAKFP packages

Features Industry’slowestRDS(on)xarea Industry’sbestfigureofmerit(FoM) Ultra-lowgatecharge 100avalanchetested Zener-protected Applications Switchingapplications Description TheseveryhighvoltageN-channelPower MOSFETaredesignedusingMDmesh™K5 technol

STFI14N80K5

Marking：14N80K5；Package：TO-281；N-channel 800 V, 0.400 Ω typ., 12 A MDmesh™ K5 Power MOSFETs in TO-220FP and I²PAKFP packages

Features Industry’slowestRDS(on)xarea Industry’sbestfigureofmerit(FoM) Ultra-lowgatecharge 100avalanchetested Zener-protected Applications Switchingapplications Description TheseveryhighvoltageN-channelPower MOSFETaredesignedusingMDmesh™K5 technol

STFU14N80K5

Marking：14N80K5；Package：TO-220FP；N-channel 800 V, 0.400 Ω typ., 12 A MDmesh™ K5 Power MOSFET in a TO-220FP ultra narrow leads package

Features •Industry’slowestRDS(on)xarea •Industry’sbestFoM(figureofmerit) •Ultra-lowgatecharge •100avalanchetested •Zener-protected Applications •Switchingapplications Description ThisveryhighvoltageN-channelPowerMOSFETisdesignedusingMDmesh™K5 technology

STP140N10F4

Marking：140N10F4；Package：TO-220；N-channel 100 V, 5.2 mΩ, 60 A TO-220, D2PAK, TO-220FP STripFET™ DeepGATE™ Power MOSFET

Features ■Exceptionaldv/dtcapability ■Extremelylowon-resistanceRDS(on) ■100avalanchetested Application ■Switchingapplications Description ThisPowerMOSFETisamongthelatest developmentsthatuseanadvancedtechnology (STripFET™DeepGATE™technology),which hasbeenes

STP14N80K5

Marking：14N80K5；Package：TO-220；N-channel 800 V, 0.400 Ω typ., 12 A MDmesh™ K5 Power MOSFET in a TO-220 package

Features Industry’slowestRDS(on)xarea Industry’sbestFoM(figureofmerit) Ultra-lowgatecharge 100avalanchetested Zener-protected Applications Switchingapplications Description ThisveryhighvoltageN-channelPower MOSFETisdesignedusingMDmesh™K5 technolog

SVF14N25CDTR

Marking：14N25CD；Package：TO-252-2L；14A, 250V N-CHANNEL MOSFET

GENERALDESCRIPTION SVF14N25CDisanN-channelenhancementmodepowerMOSfield effecttransistorwhichisproducedusingSilanproprietaryF-CellTM high-voltageplanarVDMOStechnology.Theimprovedprocessand cellstructurehavebeenespeciallytailoredtominimizeon-state resistance,pro

TCAN1462DRBRQ1

Marking：1462；Package：SON；TCAN1462-Q1 and TCAN1462V-Q1 Automotive Fault-Protected CAN FD Transceiver with Signal Improvement Capability (SIC) and Standby Mode

1Features •AECQ100(Grade1):Qualifiedforautomotive applications •FunctionalSafety-Capable –Documentationavailabletoaidfunctionalsafety systemdesign •MeetstherequirementsofISO11898-2:2016and CiA601-4standards •ClassicalCANandCANFDupto8Mbps –Activelyimpro

TCAN1462DRQ1

Marking：1462；Package：SOIC；TCAN1462-Q1 and TCAN1462V-Q1 Automotive Fault-Protected CAN FD Transceiver with Signal Improvement Capability (SIC) and Standby Mode

1Features •AECQ100(Grade1):Qualifiedforautomotive applications •FunctionalSafety-Capable –Documentationavailabletoaidfunctionalsafety systemdesign •MeetstherequirementsofISO11898-2:2016and CiA601-4standards •ClassicalCANandCANFDupto8Mbps –Activelyimpro

TCAN1462VDRBRQ1

Marking：1462V；Package：SON；TCAN1462-Q1 and TCAN1462V-Q1 Automotive Fault-Protected CAN FD Transceiver with Signal Improvement Capability (SIC) and Standby Mode

1Features •AECQ100(Grade1):Qualifiedforautomotive applications •FunctionalSafety-Capable –Documentationavailabletoaidfunctionalsafety systemdesign •MeetstherequirementsofISO11898-2:2016and CiA601-4standards •ClassicalCANandCANFDupto8Mbps –Activelyimpro