F1429MBNELI

Marking：14MB；Package：12-DFN；100Ω DIFF-In – 50Ω SE-Out Amplifier 3.0GHz to 4.2GHz

Features RFrange:3.0GHzto4.2GHz Gain=21dBat3.55GHz Noisefigure=1.8dBat3.55GHz OIP3=+40dBmat3.55GHz OutputP1dB=+21dBmat3.55GHz Gainvariationovertemperature=±0.2typical 100Ωdifferentialinputimpedance 50Ωsingle-endedoutputimpedance 3.3Vor5Vpower

F1429MBNELI8

Marking：14MB；Package：12-DFN；100Ω DIFF-In – 50Ω SE-Out Amplifier 3.0GHz to 4.2GHz

Features RFrange:3.0GHzto4.2GHz Gain=21dBat3.55GHz Noisefigure=1.8dBat3.55GHz OIP3=+40dBmat3.55GHz OutputP1dB=+21dBmat3.55GHz Gainvariationovertemperature=±0.2typical 100Ωdifferentialinputimpedance 50Ωsingle-endedoutputimpedance 3.3Vor5Vpower

GAN140-650EBE

Marking：140IEBE；Package：SOT8074-1；650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

1.Generaldescription TheGAN140-650EBEisageneralpurpose650V,140mΩGalliumNitride(GaN)FETina DFN8mmx8mmsurfacemountpackage.Itisanormally-offe-modedeviceofferingsuperior performance. 2.Featuresandbenefits •Enhancementmode-normally-offpowerswitch •Ultra

GAN140-650FBE

Marking：140IFBE；Package：SOT8075-1；650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package

1.Generaldescription TheGAN140-650FBEisageneralpurpose650V,140mΩGalliumNitride(GaN)FETina DFN5mmx6mmsurfacemountpackage.Itisanormally-offe-modedeviceofferingsuperior performance. 2.Featuresandbenefits •Enhancementmode-normally-offpowerswitch •Ultra

IPB144N12N3G

Marking：144N12N；Package：PG-TO263-3；OptiMOS?? Power-Transistor

Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchr

IPI147N12N3G

Marking：147N12N；Package：PG-TO262-3；OptiMOS?? Power-Transistor

Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchr

IPP147N12N3G

Marking：147N12N；Package：PG-TO220-3；OptiMOS?? Power-Transistor

Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchr

IPTC014N10NM5

Marking：14N10NM5；Package：PG-HDSOP-16；MOSFET OptiMOSTM 5 Power-Transistor, 100 V

Features •N-channel •Verylowon-resistanceRDS(on) •Superiorthermalresistance •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

ISL88001IE44Z-T

Marking：144；Package：3LdSC-70；Ultra Low Power 3 Ld Voltage Supervisors in SC-70 and SOT-23 Packages

TheISL88001,ISL88002,ISL88003supervisorsareextremelylowpower160nAvoltagesupervisorsthathelptomonitorthepowersupplyvoltagesinawidevarietyofapplications.ByprovidingPower-OnResetandsupplyvoltagesupervisioninsmall3LdSC-70andSOT-23packages,theISL88001,ISL8800

ISL88001IE46Z-T

Marking：146；Package：3LdSC-70；Ultra Low Power 3 Ld Voltage Supervisors in SC-70 and SOT-23 Packages

TheISL88001,ISL88002,ISL88003supervisorsareextremelylowpower160nAvoltagesupervisorsthathelptomonitorthepowersupplyvoltagesinawidevarietyofapplications.ByprovidingPower-OnResetandsupplyvoltagesupervisioninsmall3LdSC-70andSOT-23packages,theISL88001,ISL8800