丝印：12N60AF；Package：TO-220F(1.3mm)；12A 600V N-channel enhanced field effect transistor

文件：885.41 Kbytes 页数：5 Pages

YFWDIODE

佑风微

丝印：12N60AF；Package：TO-220F(1.3mm)；13A 500V N-channel enhanced field effect transistor

文件：849.02 Kbytes 页数：5 Pages

YFWDIODE

佑风微

丝印：12N60AC；Package：TO-220C；12A 600V N-channel enhanced field effect transistor

文件：885.41 Kbytes 页数：5 Pages

YFWDIODE

佑风微

丝印：12N60AC；Package：TO-220C；13A 500V N-channel enhanced field effect transistor

文件：849.02 Kbytes 页数：5 Pages

YFWDIODE

佑风微

12A, 600V N-CHANNEL POWER MOSFET

The UTC 12N60-C is a high voltage power MOSFETdesigned to have better characteristics, such as fastswitching time, low gate charge, low on-state resistance andhigh rugged avalanche characteristics. This power MOSFETis usually used in high speed switching applications ofswitching power supplies and a RDS(ON) < 0.7 Ω @ VGS = 10 V, ID = 6.0 A Fast switching capability Avalanche energy tested Improved dv/dt capability, high ruggedness;

UTC

友顺

高压MOSFET

PINGWEI

平伟