丝印：12N60；Package：TO-220C；12A 600V N-channel Enhancement Mode Power MOSFET

文件：897.58 Kbytes 页数：11 Pages

WXDH

东海半导体

丝印：12N60；Package：TO-220C；12A 600V N-channel Enhancement Mode Power MOSFET

文件：898.09 Kbytes 页数：11 Pages

WXDH

东海半导体

丝印：12N60；Package：TO-220C；12A 600V N-channel Enhancement Mode Power MOSFET

文件：897.54 Kbytes 页数：11 Pages

WXDH

东海半导体

丝印：12N60；Package：TO-220C；12A 600V N-channel Enhancement Mode Power MOSFET

文件：898.24 Kbytes 页数：11 Pages

WXDH

东海半导体

600VN-Channel MOSFET GENERAL DESCRIPTION

Features •12A, 600V, RDS(on) = 0.65Ω @VGS = 10 V • Low gate charge ( typical 52nC) • Fast switching • 100% avalanche tested • Improved dv/dt capability

文件：863.07 Kbytes 页数：9 Pages

GOFORD

谷峰半导体

12 Amps, 600/650 Volts N-CHANNEL MOSFET

The UTC 12N60are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced using UTCs proprietary, planar stripe, DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior switching p

文件：235.07 Kbytes 页数：6 Pages

UTC

友顺

12 Amps, 600/650 Volts N-CHANNEL MOSFET

文件：358.2 Kbytes 页数：7 Pages

UTC

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12A, 600V N-CHANNEL POWER MOSFET

文件：371.21 Kbytes 页数：7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件：2.48891 Mbytes 页数：8 Pages

SUNMATE

森美特

12A mps,600 Volts N-CHANNEL MOSFET

文件：194.03 Kbytes 页数：2 Pages

CHONGQING

平伟实业