12A mps,600 Volts N-CHANNEL MOSFET

文件：194.03 Kbytes 页数：2 Pages

CHONGQING

平伟实业

Drain Current ?밒D= 12A@ TC=25C

文件：136.61 Kbytes 页数：2 Pages

ISC

无锡固电

600V N-Channel Power MOSFET

文件：2.2536 Mbytes 页数：9 Pages

DYELEC

迪一电子

N-Channel Power MOSFET

文件：356.07 Kbytes 页数：7 Pages

NELLSEMI

尼尔半导体

12A, 600V  N-CHANNEL  POWER MOSFET

The UTC 12N60 are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced using UTC’s proprietary, planar stripe, DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior switching performa • RDS(ON) = 0.8Ω @VGS = 10 V \n• Ultra low gate charge ( typical 42 nC )   \n• Low reverse transfer capacitance ( CRSS = typical 25 pF ) \n• Fast switching capability \n• Avalanche energy specified \n• Improved dv/dt capability, high ruggedness;

UTC

友顺

丝印：12N60；Package：TO-220；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES • Low Crss • Low gate charge • Fast switching • Improved ESD capability • Improved dv/dt capability • 100% avalanche energy test

文件：1.76538 Mbytes 页数：7 Pages

RECTRON

丽正国际

丝印：12N60；Package：TO-220F；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES • Low Crss • Low gate charge • Fast switching • Improved ESD capability • Improved dv/dt capability • 100% avalanche energy test

文件：1.76538 Mbytes 页数：7 Pages

RECTRON

丽正国际

600V, SMPS Series N-Channel IGBTs

The HGTP12N60A4, HGTG12N60A4 and HGT1S12N60A4S9A are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-stat

文件：229.61 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-st

文件：394.53 Kbytes 页数：8 Pages

INTERSIL

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-st

文件：173.18 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体