600V, SMPS Series N-Channel IGBTs

The HGTP12N60A4, HGTG12N60A4 and HGT1S12N60A4S9A are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-stat

文件：229.61 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

600V, SMPS Series N-Channel IGBT

The HGTP12N60A4, HGTG12N60A4 and HGT1S12N60A4S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state vo • 100kHz Operation at 390V, 12A\n• 200kHz Operation at 390V, 9A\n• 600V Switching SOA Capability\n• Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at TJ = 125°C\n• Low Conduction Loss\n• Temperature Compensating SABER Model\n   //www.intersil.com\n• Related Literature\n   - TB334 “Guideline;

Renesas

瑞萨

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-st

文件：173.18 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-st

文件：394.53 Kbytes 页数：8 Pages

INTERSIL