11N60C3其他被动元件规格书应用电路批发采购-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
11N60C3	文件：1.84713 Mbytes Page：8 Pages	N-Channel650V(D-S)MOSFET	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
ISPP11N60C3	文件：339.13 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRITION •Ultralowgatecharge •Highpeakcurrentcapability •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.38Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice perform	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
ISPW11N60C3	文件：335.59 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor •DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤380mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
SPA11N60C3	文件：314.85 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor •FEATURES •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Highpeakcurrentcapability •Improvedtransconductance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
SPA11N60C3	文件：1.07096 Mbytes Page：9 Pages	N-Channel650V(D-S)PowerMOSFET FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS)	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
SPA11N60C3	文件：352.75 Kbytes Page：14 Pages	CoolMOS??PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
SPA11N60C3	文件：659.64 Kbytes Page：16 Pages	CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
SPA11N60C3	文件：662.11 Kbytes Page：15 Pages	CoolMOS??PowerTransistor	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
SPB11N60C3	文件：475.58 Kbytes Page：13 Pages	CoolMOSPowerTransistor	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
SPB11N60C3	文件：193.21 Kbytes Page：14 Pages	CoolMOSPowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •150°Coperatingtemperature	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
SPB11N60C3	文件：352.75 Kbytes Page：14 Pages	CoolMOS??PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
SPB11N60C3	文件：1.04045 Mbytes Page：8 Pages	N-Channel650V(D-S)MOSFET FEATURES •Reducedtrr,Qrr,andIRRM •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •LowswitchinglossesduetoreducedQrr •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Telecommunications -Serverandtelecompowersupplies •Light	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
SPB11N60C3	文件：189.57 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor •FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Switchingapplications	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
SPBI11N60C3	文件：193.21 Kbytes Page：14 Pages	CoolMOSPowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •150°Coperatingtemperature	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
SPI11N60C3	文件：193.21 Kbytes Page：14 Pages	CoolMOSPowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •150°Coperatingtemperature	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
SPI11N60C3	文件：352.75 Kbytes Page：14 Pages	CoolMOS??PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
SPI11N60C3	文件：662.11 Kbytes Page：15 Pages	CoolMOS??PowerTransistor	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
SPI11N60C3	文件：659.64 Kbytes Page：16 Pages	CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
SPI11N60C3	文件：331.58 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor •DESCRITION •Ultralowgatecharge •Highpeakcurrentcapability •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.38Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice perform	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
SPP11N60C3	文件：1.03545 Mbytes Page：8 Pages	N-Channel650V(D-S)MOSFET FEATURES •Reducedtrr,Qrr,andIRRM •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •LowswitchinglossesduetoreducedQrr •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS)	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳兆威电子有限公司	11N60C3其他被动元件	INFINEON/英飞凌	23+	TO-220F	90000	原装原盘	询价
深圳市亿顺芯科技有限公司	11N60C3其他被动元件	INFINEON/英飞凌	2022+	TO-220	57550		询价
深圳市科芯源微电子有限公司	11N60C3其他被动元件	INFINEON/英飞凌	24+	TO220247	58000	全新原厂原装正品现货,可提供技术支持、样品免费!	询价
深圳市维尔达电子有限公司	11N60C5	Infineon	2023+	TO-247	80000	一级代理/分销渠道价格优势十年芯程一路只做原装正品	询价
瀚佳科技(深圳)有限公司	11N60C5	Infineon	21+	TO-247	35210	一级代理/放心采购	询价
深圳市创新迹电子有限公司	11N60C5	Infineon	23+	TO-247	5000	专注配单,只做原装进口现货	询价
深圳市安富世纪电子有限公司	11N60C5	Infineon	23+	TO-247	5000	专注配单,只做原装进口现货	询价
深圳市昌和盛利电子有限公司	11N60CFD	INFINEON	23+	TO3P	9562		询价
深圳市博浩通科技有限公司	11N60CFD	HAR	23+	TO220	1581	专业优势供应	询价
齐创科技(上海,北京,青岛)有限公司	11N60CFD	INFINEON	23+	TO-3P	5000	原装正品,假一罚十	询价

更多11N60C3其他被动元件供应商更新时间2024-5-5 10:50:00

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