1SS352

ULTRA HIGH SPEED SWITCHING APPLICATION DIODE

ULTRAHIGHSPEEDSWITCHINGAPPLICATIONDIODE Features SmallPackage Lowforwardvoltage:VF(3)=0.98(Typ) Fastreverserecoverytime:trr=1.6ns(Typ) Smalltotalcapacitance:CT=0.5pF(Typ)

1SS352

SILICON EPITAXIAL PLANAR DIODE

SILICONEPITAXIALPLANARDIODE Features •Lowforwardvoltage •FastReverseRecoveryTime •SmallTotalCapacitance Application •Ultrahighspeedswitching

1SS352

Ultra High Speed Switching Application

UltraHighSpeedSwitchingApplication •Smallpackage •Lowforwardvoltage:VF(3)=0.98V(typ.) •Fastreverserecoverytime:trr=1.6ns(typ.) •Smalltotalcapacitance:CT=0.5pF(typ.)

1SS352

Silicon Epitaxial Planar Switching Diode

Features •Lowforwardvoltage •FastReverseRecoveryTime •SmallTotalCapacitance Application •Ultrahighspeedswitching

1SS352

DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)

UltraHighSpeedSwitchingApplication •Smallpackage •Lowforwardvoltage:VF(3)=0.98V(typ.) •Fastreverserecoverytime:trr=1.6ns(typ.) •Smalltotalcapacitance:CT=0.5pF(typ.)

1SS352

Ultra High Speed Switching Application

1SS352TPH3

Ultra High Speed Switching Application

UltraHighSpeedSwitchingApplication •Smallpackage •Lowforwardvoltage:VF(3)=0.98V(typ.) •Fastreverserecoverytime:trr=1.6ns(typ.) •Smalltotalcapacitance:CT=0.5pF(typ.)

1SS352_07

Ultra High Speed Switching Application

1SS352,H3F

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 封装/外壳：SC-76A 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURP 80V 100MA SC76-2

Toshiba Semiconductor and Storage