Axial Lead Rectifiers

This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency

文件：243.87 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

Axial Lead Rectifiers

Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-volt

文件：97 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Axial Lead Rectifiers

Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-volt

文件：97 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Axial Lead Rectifiers

This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency

文件：243.87 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

Diode Schottky 40V 3A 2-Pin DO-201AD T/R

NJS

Package：DO-201AA，DO-27，轴向；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 40V 3A DO201AD

ONSEMI

安森美半导体

Package：DO-201AD，轴向；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 40V 3A DO201AD

STMICROELECTRONICS

意法半导体

Package：DO-201AA，DO-27，轴向；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 40V 3A DO201AD

ONSEMI

安森美半导体