DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)

Ultra High Speed Switching Application ● Small package : SC-59 ● Low forward voltage : VF (3) = 0.9V (typ.) ● Fast reverse recovery time : trr = 1.6ns (typ.) ● Small total capacitance : CT = 0.9pF (typ.)

文件：127.44 Kbytes 页数：2 Pages

TOSHIBA

东芝

Surface Mount Switching Diodes 100m AMPERES 80 VOLTS

SWITCHING DIODE 100m AMPERES 80 VOLTS Features: * Fast Switching Speed * Surface Mount Package Ideally Suited for Automatic Insertion * High Conductance * For General Purpose Switching Applications

文件：221.93 Kbytes 页数：2 Pages

WEITRON

丝印：F3；Package：SOT-23；Surface mount switching diode

FEATURES ● Low forward voltage VF(3)=0.9V(typ). ● Small total capacitance:CT=0.9pF(typ). ● Fast reverse recovery time:trr=1.6ns(typ). APPLICATIONS ● High speed switching application.

文件：361.6 Kbytes 页数：3 Pages

BILIN

银河微电

Switching Diode

Switching Diode FEATURES • Low forward voltage • Fast reverse recovery time

文件：1.36627 Mbytes 页数：4 Pages

JIANGSU

长电科技

ULTRA HIGH SPEED SWITCHING APPLICATION

Features ● Small Package ● Low forward voltage :VF(3) = 0.9 V(Typ.) ● Fast Reverse Recovery Time :trr = 1.6 ns(Typ.) ● Small Total Capacitance :CT = 0.9pF(Typ.)

文件：34.99 Kbytes 页数：1 Pages

KEXIN

科信电子

丝印：F3；Package：SOT-23；SWITCHING DIODE

FEATURES Low forward voltage Fast reverse recovery time

文件：778.75 Kbytes 页数：4 Pages

SY

顺烨电子

SOT-23 Plastic-Encapsulate Diodes

Switching DIODES FEATURES • Low forward voltage : VF(3)=0.9V(typ.) • Fast reverse recovery time : trr=1.6ns(typ.)

文件：393.05 Kbytes 页数：2 Pages

TGS

SURFACE MOUNT FAST SWITCHING DIODE

High Conductance Fast Switching Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications Plastic Material – UL Recognition Flammability Classification 94V-0

文件：93.73 Kbytes 页数：4 Pages

WTE

Won-Top Electronics

SwitChing Diodes

Features ◇ Low forward voltage : VF(3)=0.9V(typ.) ◇ Fast reverse recovery time : trr=1.6ns(typ.)

文件：244.47 Kbytes 页数：2 Pages

LUGUANG

鲁光电子

SOT-23 Plastic-Encapsulate DIODE

SWITCHING DIODE FEATURES • Power dissipation PD : 150 mW(Tamb=25℃) • Forward Current IF : 100 m A • Reverse Voltage VR: 80 V • Operating and storage junction temperature range TJ,Tstg: -55℃ to +150℃

文件：88.27 Kbytes 页数：2 Pages

WINNERJOIN

永而佳