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1SS193

Marking:F3;Package:SOT-23;Surface mount switching diode

FEATURES ●LowforwardvoltageVF(3)=0.9V(typ). ●Smalltotalcapacitance:CT=0.9pF(typ). ●Fastreverserecoverytime:trr=1.6ns(typ). APPLICATIONS ●Highspeedswitchingapplication.

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

1SS193

Marking:F3;Package:SOT-23;Switching Diodes SOT-23 Plastic-Encapsulate Diodes

FEATURES: ●LOWForwardVoltage ●FastReverseRecoveryTime

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

1SS193

Marking:F3;Package:SOT-23;SWITCHING DIODE

FEATURES Lowforwardvoltage Fastreverserecoverytime

SYChangzhou Shunye Electronics Co.,Ltd.

顺烨电子江苏顺烨电子有限公司

AP66300FVBW-13

Marking:F3;Package:U-QFN4040-16/SWP;3.8V TO 60V INPUT, 3A LOW IQ SYNCHRONOUS BUCK CONVERTER

Features -VIN3.8to60V -3AContinuousOutputCurrent -VOUTAdjustablefrom0.8Vto50V -EnhancedEfficiencyModewithBias -AdjustableSwitchingFrequency.500kHzDefaultFrequency -Start-upwithPre-biasedOutput -ExternalSoft-StartwithTracking–Sequential,Ratiometric,or Ab

DIODES

Diodes Incorporated

BAS21CW

Marking:F3;Silicon Epitaxial Planar Diodes

SiliconEpitaxialPlanarDiodes HighVoltageSwitchingDiodes

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技(东莞)有限公司

BC846BQB

Marking:F3;Package:SOT8015;65 V, 100 mA NPN general-purpose transistor

Featuresandbenefits •Highpowerdissipationcapability •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •SmallerfootprintcomparedtoconventionalleadedSMDpackages •Lowpackageheightof0.5mm

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BC846BQB-Q

Marking:F3;Package:SOT8015;65 V, 100 mA NPN general-purpose transistor

Featuresandbenefits •Highpowerdissipationcapability •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •SmallerfootprintcomparedtoconventionalleadedSMDpackages •Lowpackageheightof0.5mm •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotivea

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BQ29705DSER

Marking:F3;Package:WSON;BQ297xx Cost-Effective Voltage and Current Protection Integrated Circuit for Single- Cell Li-Ion and Li-Polymer Batteries

1Features •Inputvoltagerangepack+:VSS–0.3Vto12V •FETdrive: –CHGandDSGFETdriveoutput •VoltagesensingacrossexternalFETsfor overcurrentprotection(OCP)iswithin±5mV (typical) •Faultdetection –Overchargedetection(OVP) –Over-dischargedetection(UVP) –Charge

TI1Texas Instruments

德州仪器

BQ29705DSET

Marking:F3;Package:WSON;BQ297xx Cost-Effective Voltage and Current Protection Integrated Circuit for Single- Cell Li-Ion and Li-Polymer Batteries

1Features •Inputvoltagerangepack+:VSS–0.3Vto12V •FETdrive: –CHGandDSGFETdriveoutput •VoltagesensingacrossexternalFETsfor overcurrentprotection(OCP)iswithin±5mV (typical) •Faultdetection –Overchargedetection(OVP) –Over-dischargedetection(UVP) –Charge

TI1Texas Instruments

德州仪器

BZD27C33P

Marking:F3;Voltage Regulator Diodes

Features ◇Silliconplanarzenerdiodes. ◇Lowprofilesurface-mountpackage. ◇Zenerandsurgecurrentspecification ◇Lowleakagecurrent ◇Excellentstability ◇Hightemperaturesolderingguaranteed:265℃/10seconds,atterminals

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

详细参数

  • 型号:

    F3

  • 制造商:

    BEAVERSWOOD

  • 功能描述:

    LABEL 0-9 YELLOW 14X19MM 36XEACH

供应商型号品牌批号封装库存备注价格
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更多F3供应商 更新时间2025-5-12 9:30:00