丝印：F3；Package：SOT-23；Surface mount switching diode

FEATURES ● Low forward voltage VF(3)=0.9V(typ). ● Small total capacitance:CT=0.9pF(typ). ● Fast reverse recovery time:trr=1.6ns(typ). APPLICATIONS ● High speed switching application.

文件：361.6 Kbytes 页数：3 Pages

BILIN

银河微电

丝印：F3；Package：SOT-23；SWITCHING DIODE

FEATURES Low forward voltage Fast reverse recovery time

文件：778.75 Kbytes 页数：4 Pages

SY

顺烨电子

丝印：F3；Package：SOT-23；Switching Diodes SOT-23 Plastic-Encapsulate Diodes

FEATURES: ● LOW Forward Voltage ● Fast Reverse Recovery Time

文件：399.99 Kbytes 页数：3 Pages

UMW

友台半导体

丝印：F3；Package：U-QFN4040-16/SWP；3.8V TO 60V INPUT, 3A LOW IQ SYNCHRONOUS BUCK CONVERTER

Features - VIN 3.8 to 60V - 3A Continuous Output Current - VOUT Adjustable from 0.8V to 50V - Enhanced Efficiency Mode with Bias - Adjustable Switching Frequency. 500kHz Default Frequency - Start-up with Pre-biased Output - External Soft-Start with Tracking – Sequential, Ratiometric, or Ab

文件：2.27607 Mbytes 页数：25 Pages

DIODES

美台半导体

丝印：F3；Silicon Epitaxial Planar Diodes

Silicon Epitaxial Planar Diodes High Voltage Switching Diodes

文件：510.99 Kbytes 页数：2 Pages

SEMTECH_ELEC

先之科半导体

丝印：F3；Package：SOT8015；65 V, 100 mA NPN general-purpose transistor

Features and benefits • High power dissipation capability • Suitable for Automatic Optical Inspection (AOI) of solder joint • Smaller footprint compared to conventional leaded SMD packages • Low package height of 0.5 mm

文件：229.4 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：F3；Package：SOT8015；65 V, 100 mA NPN general-purpose transistor

Features and benefits • High power dissipation capability • Suitable for Automatic Optical Inspection (AOI) of solder joint • Smaller footprint compared to conventional leaded SMD packages • Low package height of 0.5 mm • Qualified according to AEC-Q101 and recommended for use in automotive a

文件：230.09 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：F3；Package：WSON；BQ297xx Cost-Effective Voltage and Current Protection Integrated Circuit for Single- Cell Li-Ion and Li-Polymer Batteries

1 Features • Input voltage range pack+: VSS – 0.3V to 12V • FET drive: – CHG and DSG FET drive output • Voltage sensing across external FETs for overcurrent protection (OCP) is within ±5mV (typical) • Fault detection – Overcharge detection (OVP) – Over-discharge detection (UVP) – Charge

文件：1.44954 Mbytes 页数：34 Pages

TI

德州仪器

丝印：F3；Package：WSON；BQ297xx Cost-Effective Voltage and Current Protection Integrated Circuit for Single- Cell Li-Ion and Li-Polymer Batteries

1 Features • Input voltage range pack+: VSS – 0.3V to 12V • FET drive: – CHG and DSG FET drive output • Voltage sensing across external FETs for overcurrent protection (OCP) is within ±5mV (typical) • Fault detection – Overcharge detection (OVP) – Over-discharge detection (UVP) – Charge

文件：1.44954 Mbytes 页数：34 Pages

TI

德州仪器

丝印：F3；Voltage Regulator Diodes

Features ◇ Sillicon planar zener diodes. ◇ Low profile surface-mount package. ◇ Zener and surge current specification ◇ Low leakage current ◇ Excellent stability ◇ High temperature soldering guaranteed: 265℃/10 seconds, at terminals

文件：2.05751 Mbytes 页数：4 Pages

LUGUANG

鲁光电子