SP6201EM5-3-0

Marking：F30；Package：SOT-25；Micropower, 100mA and 200mA CMOS LDO Regulators

DESCRIPTION TheSP6200andSP6201areCMOSLDOsdesignedtomeetabroadrangeofapplicationsthatrequireaccuracy,speedandeaseofuse.TheseLDOsofferextremelylowquiescentcurrentwhichonlyincreasesslightlyunderload,thusprovidingadvantagesingroundcurrentperformanceoverbipo

STPS2L30AF

Marking：F30；Package：SMAflat；Low drop power Schottky rectifier

Description SinglechipSchottkyrectifiersdesignedforhighfrequencyminiatureswitchedmodepowersuppliessuchasadaptorsandonboardDC/DCconverters. PackagedinSMA,SMAFlatandSMBFlat,theSTPS2L30isidealforuseinparallelwithMOSFETsinsynchronousrectification. Features •

BAS70D

Marking：F30；Package：SOD323；Surface Mount Switching Diode

SP6201EM5-3-0

Marking：F30；Package：SOT-25；Micropower, 100mA and 200mA CMOS LDO Regulators

TPF130-TR

Marking：F30；Package：6-PinSOT23-6；36M HD Composite Video Filter Driver With Shutdown Function

WL2805N30-3/TR

Marking：F30；Package：SOT-23-3L；Low power consumption, CMOS LDO

WL2805N30-3SLASHTR

Marking：F30；Package：SOT-23-3L；Low power consumption, CMOS LDO

RFP30N06LE

Marking：F30N06LE；Package：TO-220AB；30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs

Description TheRFP30N06LE,RF1S30N06LEandRF1S30N06LESMareN-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theywere

RFP30N06LE

Marking：F30N06LE；Package：TO-220AB；30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs

TheseareN-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingreg

BTF3035EJ

Marking：F3035EJ；Package：PG-TDSO-8-31；Smart Low-Side Power Switch