丝印：1123B1A；Package：SOIC；TMCS1123 Precision 250kHz Hall-Effect Current Sensor With ±1.3kV Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection

1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation – Withstand isolation voltage: 5kVRMS – Reinforced working voltage: 1.3kVDC • High accuracy – Sensitivity error: ±0.1 – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2 – Offset er

文件：3.06071 Mbytes 页数：42 Pages

TI

德州仪器

丝印：1123B1A；Package：SOIC；TMCS1123 Precision 250kHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection

1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±2μV/°C – Offset lifetime drif

文件：3.07718 Mbytes 页数：42 Pages

TI

德州仪器

丝印：1123B1AQ1；Package：SOIC；TMCS1123-Q1 AEC-Q100, Precision 250kHz Hall-Effect Current Sensor With Reinforced Working Voltage, Overcurrent Detection and Ambient Field Rejection

1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to 125°C, TA • Functional Safety-Capable – Documentation available to aid functional safety system design • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – S

文件：3.1793 Mbytes 页数：47 Pages

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德州仪器

丝印：1120；Package：SOIC；DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

Low rDS(on) . . . 0.18 W at VGS = –10 V 3-V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have

文件：301.03 Kbytes 页数：17 Pages

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德州仪器

丝印：1120；Package：SOIC；DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

Low rDS(on) . . . 0.18 W at VGS = –10 V 3-V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have

文件：301.03 Kbytes 页数：17 Pages

TI

德州仪器

丝印：1120；Package：SOIC；DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

Low rDS(on) . . . 0.18 W at VGS = –10 V 3-V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have

文件：301.03 Kbytes 页数：17 Pages

TI

德州仪器

丝印：1120；Package：SOIC；DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

Low rDS(on) . . . 0.18 W at VGS = –10 V 3-V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have

文件：301.03 Kbytes 页数：17 Pages

TI

德州仪器

丝印：1120；Package：SOIC；DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

Low rDS(on) . . . 0.18 W at VGS = –10 V 3-V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have

文件：301.03 Kbytes 页数：17 Pages

TI

德州仪器

丝印：1120；Package：SOIC；DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

Low rDS(on) . . . 0.18 W at VGS = –10 V 3-V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have

文件：301.03 Kbytes 页数：17 Pages

TI

德州仪器

丝印：1120；Package：SOIC；DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

Low rDS(on) . . . 0.18 W at VGS = –10 V 3-V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have

文件：301.03 Kbytes 页数：17 Pages

TI

德州仪器