TPS1120DR中文资料德州仪器数据手册PDF规格书

Low rDS(on) . . . 0.18 W at VGS = –10 V

3-V Compatible

Requires No External VCC

TTL and CMOS Compatible Inputs

VGS(th) = –1.5 V Max

ESD Protection Up to 2 kV per

MIL-STD-883C, Method 3015

description

The TPS1120 incorporates two independent

p-channel enhancement-mode MOSFETs that

have been optimized, by means of the Texas

Instruments LinBiCMOSE process, for 3-V or 5-V

power distribution in battery-powered systems. With a maximum VGS(th) of –1.5 V and an IDSS of only 0.5 mA,

the TPS1120 is the ideal high-side switch for low-voltage portable battery-management systems, where

maximizing battery life is a primary concern. Because portable equipment is potentially subject to electrostatic

discharge (ESD), the MOSFETs have built-in circuitry for 2-kV ESD protection. End equipment for the TPS1120

includes notebook computers, personal digital assistants (PDAs), cellular telephones, bar-code scanners, and

PCMCIA cards. For existing designs, the TPS1120D has a pinout common with other p-channel MOSFETs in

small-outline integrated circuit SOIC packages.

The TPS1120 is characterized for an operating junction temperature range, TJ, from –40°C to 150°C.