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TPS1120D

Marking:1120;Package:SOIC;DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

LowrDS(on)...0.18WatVGS=–10V 3-VCompatible RequiresNoExternalVCC TTLandCMOSCompatibleInputs VGS(th)=–1.5VMax ESDProtectionUpto2kVper MIL-STD-883C,Method3015 description TheTPS1120incorporatestwoindependent p-channelenhancement-modeMOSFETsthat have

TI2Texas Instruments

德州仪器美国德州仪器公司

TPS1120D

DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

TITexas Instruments

德州仪器美国德州仪器公司

TPS1120D

DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

TI1Texas Instruments

德州仪器美国德州仪器公司

TPS1120D.A

Marking:1120;Package:SOIC;DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

LowrDS(on)...0.18WatVGS=–10V 3-VCompatible RequiresNoExternalVCC TTLandCMOSCompatibleInputs VGS(th)=–1.5VMax ESDProtectionUpto2kVper MIL-STD-883C,Method3015 description TheTPS1120incorporatestwoindependent p-channelenhancement-modeMOSFETsthat have

TI2Texas Instruments

德州仪器美国德州仪器公司

TPS1120D.B

Marking:1120;Package:SOIC;DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

LowrDS(on)...0.18WatVGS=–10V 3-VCompatible RequiresNoExternalVCC TTLandCMOSCompatibleInputs VGS(th)=–1.5VMax ESDProtectionUpto2kVper MIL-STD-883C,Method3015 description TheTPS1120incorporatestwoindependent p-channelenhancement-modeMOSFETsthat have

TI2Texas Instruments

德州仪器美国德州仪器公司

TPS1120DR

Marking:1120;Package:SOIC;DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

LowrDS(on)...0.18WatVGS=–10V 3-VCompatible RequiresNoExternalVCC TTLandCMOSCompatibleInputs VGS(th)=–1.5VMax ESDProtectionUpto2kVper MIL-STD-883C,Method3015 description TheTPS1120incorporatestwoindependent p-channelenhancement-modeMOSFETsthat have

TI2Texas Instruments

德州仪器美国德州仪器公司

TPS1120DR.A

Marking:1120;Package:SOIC;DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

LowrDS(on)...0.18WatVGS=–10V 3-VCompatible RequiresNoExternalVCC TTLandCMOSCompatibleInputs VGS(th)=–1.5VMax ESDProtectionUpto2kVper MIL-STD-883C,Method3015 description TheTPS1120incorporatestwoindependent p-channelenhancement-modeMOSFETsthat have

TI2Texas Instruments

德州仪器美国德州仪器公司

TPS1120DR.A

Marking:1120;Package:SOIC;DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

LowrDS(on)...0.18WatVGS=–10V 3-VCompatible RequiresNoExternalVCC TTLandCMOSCompatibleInputs VGS(th)=–1.5VMax ESDProtectionUpto2kVper MIL-STD-883C,Method3015 description TheTPS1120incorporatestwoindependent p-channelenhancement-modeMOSFETsthat have

TI2Texas Instruments

德州仪器美国德州仪器公司

TPS1120DR.B

Marking:1120;Package:SOIC;DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

LowrDS(on)...0.18WatVGS=–10V 3-VCompatible RequiresNoExternalVCC TTLandCMOSCompatibleInputs VGS(th)=–1.5VMax ESDProtectionUpto2kVper MIL-STD-883C,Method3015 description TheTPS1120incorporatestwoindependent p-channelenhancement-modeMOSFETsthat have

TI2Texas Instruments

德州仪器美国德州仪器公司

TPS1120DR.B

Marking:1120;Package:SOIC;DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

LowrDS(on)...0.18WatVGS=–10V 3-VCompatible RequiresNoExternalVCC TTLandCMOSCompatibleInputs VGS(th)=–1.5VMax ESDProtectionUpto2kVper MIL-STD-883C,Method3015 description TheTPS1120incorporatestwoindependent p-channelenhancement-modeMOSFETsthat have

TI2Texas Instruments

德州仪器美国德州仪器公司

详细参数

  • 型号:

    TPS1120D

  • 功能描述:

    MOSFET Dual P-Ch Enh-Mode MOSFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
TI/BB
2021+
SOIC-8
9450
原装现货。
询价
TI/德州仪器
24+
SOP8
25
只做原厂渠道 可追溯货源
询价
TI(德州仪器)
2022+原装正品
SOIC-8
18000
支持工厂BOM表配单 公司只做原装正品货
询价
TI(德州仪器)
24+
SOP-8
7845
支持大陆交货,美金交易。原装现货库存。
询价
TI
24+
25
询价
TI
11+
SOP8
8000
全新原装,绝对正品现货供应
询价
TI/TEXAS
23+
原厂封装
8931
询价
TI
24+
SOP-8
4897
绝对原装!现货热卖!
询价
TI
2016+
SOP8
6528
只做原厂原装现货!终端客户个别型号可以免费送样品!
询价
TI/BB
24+
原装
6868
原装现货,可开13%税票
询价
更多TPS1120D供应商 更新时间2025-7-12 13:52:00