丝印：1120；Package：SOIC；DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

Low rDS(on) . . . 0.18 W at VGS = –10 V 3-V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have

文件：301.03 Kbytes 页数：17 Pages

TI

德州仪器

DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

Low rDS(on) . . . 0.18 W at VGS = –10 V 3-V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have

文件：301.03 Kbytes 页数：17 Pages

TI

德州仪器

DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

文件：379.72 Kbytes 页数：15 Pages

TI

德州仪器

DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

Low rDS(on) . . . 0.18 W at VGS = –10 V 3-V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have

文件：301.03 Kbytes 页数：17 Pages

TI

德州仪器