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F0111EVB-2P6

Marking:11NBTI;Dual Path Ultra-Low Noise Amplifier 2200MHz to 4200MHz

Features •RFrange:2200MHzto4200MHz oF0109:650MHzto1000MHz oF0110:1500MHzto2300MHz •18.5dBtypicalgainat2600MHz •0.55dBtypicalNFat2600MHz •+38.5dBmtypicalOIP3at2600MHz •50ΩSingle-endedinput/outputimpedances •+5Vpowersupply •ICC=45mAperchannel •Indep

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

F0111EVB-3P5

Marking:11NBTI;Dual Path Ultra-Low Noise Amplifier 2200MHz to 4200MHz

Features •RFrange:2200MHzto4200MHz oF0109:650MHzto1000MHz oF0110:1500MHzto2300MHz •18.5dBtypicalgainat2600MHz •0.55dBtypicalNFat2600MHz •+38.5dBmtypicalOIP3at2600MHz •50ΩSingle-endedinput/outputimpedances •+5Vpowersupply •ICC=45mAperchannel •Indep

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

F0111NBTI

Marking:11NBTI;Package:16-VFQFPN;Dual Path Ultra-Low Noise Amplifier 2200MHz to 4200MHz

Features •RFrange:2200MHzto4200MHz oF0109:650MHzto1000MHz oF0110:1500MHzto2300MHz •18.5dBtypicalgainat2600MHz •0.55dBtypicalNFat2600MHz •+38.5dBmtypicalOIP3at2600MHz •50ΩSingle-endedinput/outputimpedances •+5Vpowersupply •ICC=45mAperchannel •Indep

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

F0111NBTI8

Marking:11NBTI;Package:16-VFQFPN;Dual Path Ultra-Low Noise Amplifier 2200MHz to 4200MHz

Features •RFrange:2200MHzto4200MHz oF0109:650MHzto1000MHz oF0110:1500MHzto2300MHz •18.5dBtypicalgainat2600MHz •0.55dBtypicalNFat2600MHz •+38.5dBmtypicalOIP3at2600MHz •50ΩSingle-endedinput/outputimpedances •+5Vpowersupply •ICC=45mAperchannel •Indep

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

GLZ11A

Marking:11A;Package:MELF;500mW SURFACE MOUNT ZENER DIODE

PlanarDieConstruction 500mWPowerDissipation 2.0–56VNominalZenerVoltage IdeallySuitedforAutomatedAssembly ForUseinVoltageStabilizerorReference

WTEWon-Top Electronics

毅星電子毅星电子股份有限公司

GLZ11B

Marking:11B;Package:MELF;500mW SURFACE MOUNT ZENER DIODE

PlanarDieConstruction 500mWPowerDissipation 2.0–56VNominalZenerVoltage IdeallySuitedforAutomatedAssembly ForUseinVoltageStabilizerorReference

WTEWon-Top Electronics

毅星電子毅星电子股份有限公司

GLZ11C

Marking:11C;Package:MELF;500mW SURFACE MOUNT ZENER DIODE

PlanarDieConstruction 500mWPowerDissipation 2.0–56VNominalZenerVoltage IdeallySuitedforAutomatedAssembly ForUseinVoltageStabilizerorReference

WTEWon-Top Electronics

毅星電子毅星电子股份有限公司

HFA1105IB

Marking:1105IB;Package:8LdSOIC;330MHz, Low Power, Current Feedback Video Operational Amplifier

TheHFA1105isahighspeed,lowpowercurrentfeedbackamplifierbuiltwithIntersil’sproprietarycomplementarybipolarUHF-1process. Features •LowSupplyCurrent........................5.8mA •HighInputImpedance.......................1MΩ

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

HFA1105IB96

Marking:1105IB;Package:8LdSOIC;330MHz, Low Power, Current Feedback Video Operational Amplifier

TheHFA1105isahighspeed,lowpowercurrentfeedbackamplifierbuiltwithIntersil’sproprietarycomplementarybipolarUHF-1process. Features •LowSupplyCurrent........................5.8mA •HighInputImpedance.......................1MΩ

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

HFA1105IBZ

Marking:1105IBZ;Package:8LdSOIC;330MHz, Low Power, Current Feedback Video Operational Amplifier

TheHFA1105isahighspeed,lowpowercurrentfeedbackamplifierbuiltwithIntersil’sproprietarycomplementarybipolarUHF-1process. Features •LowSupplyCurrent........................5.8mA •HighInputImpedance.......................1MΩ

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

产品属性

  • 产品编号:

    11

  • 制造商:

    JKL Components Corp.

  • 类别:

    光电器件 > 灯 - 白炽灯,氖灯

  • 包装:

  • 类型:

    白炽

  • 颜色:

    透明

  • 额定电压:

    2.5V

  • 透镜样式:

    圆形,带圆顶

  • 透镜尺寸:

    RT-1 3/4

  • 引线样式:

    楔形

  • 描述:

    LAMP INCAND RT-1.75 WEDGE 2.5V

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