AZ1123-04F.R7G

Marking：112XY；Package：DFN2510P10E；Ultra-Low Capacitance ESD Protection Array For High-Speed I/O Port

Features ESDprotectionforfourhigh-speedI/Ochannels Providetransientprotectionforeachlineto IEC61000-4-2(ESD)±15kV(air),±12kV(contact) IEC61000-4-5(Lightning)6.5A(8/20s) Forlowoperatingvoltageof3.3Vandbelow Ultra-lowcapacitance:0.2pFtypical Fastturn

AZ1145-04F.R7G

Marking：114XY；Package：DFN2510P10E；Ultra-Low Capacitance ESD Protection Array For High-Speed I/O Port

Features ESDprotectionfor4high-speedI/Ochannels Providetransientprotectionforeachlineto IEC61000-4-2(ESD)±20kV(air),±20kV(contact) IEC61000-4-4(EFT)40A(5/50ns) IEC61000-4-5(Lightning)7A(8/20s) Forlowoperatingvoltageof5Vandbelow Ultra-lowcapacitance

AZ1165-06Q

Marking：1165Q；Package：MSOP-8L；Ultra Low Capacitance ESD Protection Array For High Speed I/O Port

Features
ESDProtectforSuperSpeedDifferential Signaling(above5Gb/s)channels
ProtectssixI/Olinesoperatingupto3.3V andbelow
ProtectsoneVDDlineoperatingupto5.0V andbelow
ProvideESDprotectionforeachchannelto IEC61000-4-2(ESD)±15kV(air),±10kV(contact)

BC817-25QA

Marking：110100；Package：DFN1010D-3；45 V, 500 mA NPN general-purpose transistors

Featuresandbenefits *General-purposetransistor *Twocurrentgainselections *Lowpackageheightof0.37mm *AEC-Q101qualified

BSC110N15NS5SC

Marking：110N15SC；Package：PG-WSON-8；OptiMOSTM 5 Power-Transistor, 150 V

Features •Dual-sidecooledpackagewithlowestJunction-topthermalresistance •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •Idealforhigh-frequencyswitchi

BSC119N03SG

Marking：119N03S；Package：PG-TDSON-8；OptiMOS?? Power-Transistor

Features •FastswitchingMOSFETforSMPS •OptimizedtechnologyfornotebookDC/DCconverters •QualifiedaccordingtoJEDEC1)fortargetapplications •N-channel;Logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Superiorthermalresistance

BZV49-C11

Marking：11Y；Package：SC-62；Voltage regulator diodes

FEATURES •Totalpowerdissipation:max.1W •Toleranceseries:approx.±5 •Workingvoltagerange:nom.2.4to75V(E24range) •Non-repetitivepeakreversepowerdissipation:max.40W. APPLICATIONS •Generalregulationfunctions. DESCRIPTION Medium-powervoltageregulatordiodesinaS

BZV49-C11

Marking：11Y；Package：SOT-89；Voltage regulator diodes

DESCRIPTION Medium-powervoltageregulatordiodesinaSOT89plasticSMDpackage. FEATURES •Totalpowerdissipation:max.1W •Toleranceseries:approx.±5 •Workingvoltagerange:nom.2.4to75V(E24range) •Non-repetitivepeakreversepowerdissipation:max.40W.

CMSZDA30V

Marking：11W；Package：SOT-323；SURFACE MOUNT DUAL, SILICON ZENER DIODE 2.4 VOLTS THRU 47 VOLTS

DESCRIPTION: TheCENTRALSEMICONDUCTORCMSZDA2V4Seriessilicondualzenerdiodeisahighlyqualityvoltageregulator,connectedinacommonanodeconfiguration,foruseinindustrial,commercial,entertainmentandcomputerapplications.

DTA113ZUA

Marking：111；Package：SOT-323；Digital transistors (built-in resistors)

Features 1)Thebuilt-inbiasresistorallowstheconfigurationofaninvertercircuitwithoutconnectinganyexternalinputresistors(seeEquivalentcircuit). 2)Eachbiasresistorisathin-filmresistor.Sincetheyarecompletelyinsulated,theinputcanbepositivelybiased.Theinsulat