丝印：085N06TD；Package：TO-252；MOSFET

Features - Super low on-resistance. - AEC-Q101 Qualified. - Advanced shielded-gate tench technology. - Excellent Cdv/ dt effect decline. - Fast switching speed.

文件：668.94 Kbytes 页数：7 Pages

COMCHIP

典琦

丝印：085N15N6；Package：PG-TO263-3；MOSFET OptiMOS™ 6 Power‑Transistor, 150 V

Features • N‑channel, normal level • Very low on‑resistance RDS(on) • Superior thermal resistance • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 • MSL 1 classified according to J‑STD‑020

文件：723.35 Kbytes 页数：11 Pages

INFINEON

英飞凌

丝印：085R5NL5；Package：PDFN-8-5X6X0.95-1.27；120A, 85V N-CHANNEL MOSFET

DESCRIPTION The SVT085R5NT/S/L5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

文件：315.58 Kbytes 页数：8 Pages

SILAN

士兰微

丝印：085R5NL5；Package：PDFN-8-5X6X0.95-1.27；120A, 85V N-CHANNEL MOSFET

DESCRIPTION The SVT085R5NT/S/L5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

文件：315.58 Kbytes 页数：8 Pages

SILAN

士兰微

丝印：085R5NL5；Package：PDFN-8-5X6X0.95-1.27；120A, 85V N-CHANNEL MOSFET

DESCRIPTION The SVT085R5NT/S/L5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

文件：315.56 Kbytes 页数：8 Pages

SILAN

士兰微

丝印：085R5NL5；Package：PDFN-8-5X6X0.95-1.27；120A, 85V N-CHANNEL MOSFET

DESCRIPTION The SVT085R5NT/S/L5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

文件：315.56 Kbytes 页数：8 Pages

SILAN

士兰微

丝印：085R5NS；Package：TO-263-2L；120A, 85V N-CHANNEL MOSFET

DESCRIPTION The SVT085R5NT/S/L5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

文件：315.58 Kbytes 页数：8 Pages

SILAN

士兰微

丝印：085R5NS；Package：TO-263-2L；120A, 85V N-CHANNEL MOSFET

DESCRIPTION The SVT085R5NT/S/L5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

文件：315.58 Kbytes 页数：8 Pages

SILAN

士兰微

丝印：085R5NS；Package：TO-263-2L；120A, 85V N-CHANNEL MOSFET

DESCRIPTION The SVT085R5NT/S/L5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

文件：315.56 Kbytes 页数：8 Pages

SILAN

士兰微

丝印：085R5NS；Package：TO-263-2L；120A, 85V N-CHANNEL MOSFET

DESCRIPTION The SVT085R5NT/S/L5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

文件：315.56 Kbytes 页数：8 Pages

SILAN

士兰微