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SVT085R5NS

丝印:085R5NS;Package:TO-263-2L;120A, 85V N-CHANNEL MOSFET

DESCRIPTION The SVT085R5NT/S/L5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

文件:315.58 Kbytes 页数:8 Pages

SILAN

士兰微

SVT085R5NS

丝印:085R5NS;Package:TO-263-2L;120A, 85V N-CHANNEL MOSFET

DESCRIPTION The SVT085R5NT/S/L5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

文件:315.58 Kbytes 页数:8 Pages

SILAN

士兰微

SVT085R5NS

丝印:085R5NS;Package:TO-263-2L;120A, 85V N-CHANNEL MOSFET

DESCRIPTION The SVT085R5NT/S/L5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

文件:315.56 Kbytes 页数:8 Pages

SILAN

士兰微

SVT085R5NS

丝印:085R5NS;Package:TO-263-2L;120A, 85V N-CHANNEL MOSFET

DESCRIPTION The SVT085R5NT/S/L5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

文件:315.56 Kbytes 页数:8 Pages

SILAN

士兰微

SVT085R5NSTR

丝印:085R5NS;Package:TO-263-2L;120A, 85V N-CHANNEL MOSFET

DESCRIPTION The SVT085R5NT/S/L5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

文件:315.58 Kbytes 页数:8 Pages

SILAN

士兰微

SVT085R5NSTR

丝印:085R5NS;Package:TO-263-2L;120A, 85V N-CHANNEL MOSFET

DESCRIPTION The SVT085R5NT/S/L5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

文件:315.58 Kbytes 页数:8 Pages

SILAN

士兰微

SVT085R5NSTR

丝印:085R5NS;Package:TO-263-2L;120A, 85V N-CHANNEL MOSFET

DESCRIPTION The SVT085R5NT/S/L5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

文件:315.56 Kbytes 页数:8 Pages

SILAN

士兰微

SVT085R5NSTR

丝印:085R5NS;Package:TO-263-2L;120A, 85V N-CHANNEL MOSFET

DESCRIPTION The SVT085R5NT/S/L5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

文件:315.56 Kbytes 页数:8 Pages

SILAN

士兰微

085R5NS

120A, 85V N-CHANNEL MOSFET

DESCRIPTION The SVT085R5NT/S/L5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

文件:315.56 Kbytes 页数:8 Pages

SILAN

士兰微

供应商型号品牌批号封装库存备注价格
SILAN/士兰微
22+
TO-263
40000
全新原装
询价
Silan
24+
TO-263
16500
假一赔百原装正品价格优势实单可谈
询价
Silan
24+
TO-263
10000
只有原装
询价
24+
N/A
58000
一级代理-主营优势-实惠价格-不悔选择
询价
SILAN/士兰微
25+
TO-220-3L
188600
全新原厂原装正品现货 欢迎咨询
询价
SILAN/士兰微
24+
TO-220
126000
专营SILAN士兰微原装保障
询价
SILAN(士兰微)
23+
TO-220
854
三极管/MOS管/晶体管 > 场效应管(MOSFET)
询价
SILAN(士兰微)
2025+
TO-220
10560
询价
SILAN(士兰微电子)
2511
8484
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
询价
SILAN(士兰微电子)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞
询价
更多085R5NS供应商 更新时间2025-9-16 10:38:00