DT115TKA

Marking：09；Package：T146；Digital transistors (built in resistor)

Features 1)Built-inbiasresistorsenabletheconfigurationofaninvertercircuitwithoutconnectingexternalinputresistors. 2)Thebiasresistorsconsistofthin-filmresistorswithcompleteisolationtoallownegativebiasingoftheinput,andparasiticeffectsarealmostcompletelyelimin

DTC115TH

Marking：09；Package：T2L；Digital transistors (built in resistor)

Features 1)Built-inbiasresistorsenabletheconfigurationofaninvertercircuitwithoutconnectingexternalinputresistors. 2)Thebiasresistorsconsistofthin-filmresistorswithcompleteisolationtoallownegativebiasingoftheinput,andparasiticeffectsarealmostcompletelyelimin

DTC115TUA

Marking：09；Package：T106；Digital transistors (built in resistor)

Features 1)Built-inbiasresistorsenabletheconfigurationofaninvertercircuitwithoutconnectingexternalinputresistors. 2)Thebiasresistorsconsistofthin-filmresistorswithcompleteisolationtoallownegativebiasingoftheinput,andparasiticeffectsarealmostcompletelyelimin

PDTB114ET

Marking：09；Package：SOT23；50 V, 500 mA PNP resistor-equipped transistor

1.Generaldescription PNPResistor-EquippedTransistor(RET)inasmallSOT23Surface-MountedDevice(SMD)plastic package. NPNcomplement:PDTD114ET 2.Featuresandbenefits •500mAoutputcurrentcapability •Built-inbiasresistors •Simplifiescircuitdesign •Reducescomponentcou

PDTB114ET

Marking：09；Package：SOT23；500 mA, 50 V PNP resistor-equipped transistors

Features 500mAoutputcurrentcapability Built-inbiasresistors Simplifiescircuitdesign Reducescomponentcount 10resistorratiotolerance AEC-Q101qualified Hightemperatureapplications upto175°C

PDTB114ET

Marking：09；Package：TO-236AB；500 mA, 50 V PNP resistor-equipped transistors

Generaldescription PNPResistor-EquippedTransistor(RET)familyinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD)plasticpackage. Features ■500mAoutputcurrentcapability ■±10resistorratiotolerance ■Built-inbiasresistors ■AEC-Q101qualified ■Simplifiescircuitdesign

PDTC114EE

Marking：09；Package：SC-75；NPN resistor-equipped transistors; R1 = 10 k, R2 = 10 k

Featuresandbenefits 100mAoutputcurrentcapability Built-inbiasresistors Simplifiescircuitdesign Reducescomponentcount Reducespickandplacecosts AEC-Q101qualified

PDTC114EE

Marking：09；Package：SOT-416；NPN resistor-equipped transistor

DESCRIPTION NPNresistor-equippedtransistor FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplification •Inverterandinterfacecircuits •Circuitdriver.

PDTC114EE

Marking：09；Package：SOT-416；NPN resistor-equipped transistor; R1 = 10 k廓, R2 = 10 k廓

DESCRIPTION NPNResistor-EquippedTransistor(RET)familyinsmallSurface-MountedDevice(SMD)plasticpackages. FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandampli

PDTC114EE

Marking：09；Package：SOT-416；NPN resistor-equipped transistor; R1 = 10 kohm, R2 = 10 kohm

DESCRIPTION NPNresistor-equippedtransistor FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplification •Inverterandinterfacecircuits •Circuitdriver.