丝印：093N15SC；Package：PG-WSON-8；OptiMOSTM 5 Power-Transistor, 150 V

Features • Dual-side cooled package with lowest junction-top thermal resistance • N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very low on-resistance RDS(on) • Very low reverse recovery charge (Qrr) • 175 °C operating temperature • Pb-free lead plating; RoHS com

文件：1.07028 Mbytes 页数：11 Pages

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